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A Seismic Hazard Map Based on Geology and Shear-wave Velocity in Rawalpindi–Islamabad,Pakistan
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作者 Sarfraz khan Muhammad WASEEM m.asif khan 《Acta Geologica Sinica(English Edition)》 SCIE CAS CSCD 2021年第2期659-673,共15页
The‘twin cities’district of Rawalpindi–Islamabad is among the most endangered seismic regions in Pakistan,with the seismic hazard assessed(0.32 g)to intensity IX MMI for a 475-year return period.A seismic hazard ma... The‘twin cities’district of Rawalpindi–Islamabad is among the most endangered seismic regions in Pakistan,with the seismic hazard assessed(0.32 g)to intensity IX MMI for a 475-year return period.A seismic hazard map for Rawalpindi–Islamabad is presented herein,based on 85 shear-wave velocity(VS)profiles obtained through geophysical H/V measurements and from the geological map of the region.Relationships between the average top thirty-meter shear-wave velocities(VS30)and surficial geological units have been determined.The peak ground acceleration(PGA)maps for 150,475 and 2475-year return periods were converted into a seismic intensity map.Intensity increments for different soils were used to compute PGA values for 150,475 and 2475-year return periods.Sites located on softer ground experienced a higher degree of damage from moderate earthquakes.Due to the presence of soft clay or liquefiable soil and lateral spreading,a few locations may be classified as hybrid sites class C and D.This map is a critical step in facilitating code-based site classification and seismic design throughout Rawalpindi–Islamabad.Although the seismic hazard map based on seismic intensities is no longer used in engineering geology,it is still important in seismological analysis and for civil protection purposes. 展开更多
关键词 seismic hazard site classification intensity increment engineering geology Rawalpindi-Islamabad
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高跨导AlGaN/GaN光电子异质结构场效应晶体管
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作者 m.asif khan 芦卫 《半导体情报》 1996年第5期40-41,共2页
报道了在光照下具有高跨导值(高达64mS/mm)的1μm栅 Al_(0.15)Ga_(0.85)N/GaN 异质结构场效应晶体管(HFET),解释了光照下器件跨导和电流的增加是由于沟道中产生的俘获正电荷和导电电子造成的。这些俘获正电荷和导电电子使器件沟道中二... 报道了在光照下具有高跨导值(高达64mS/mm)的1μm栅 Al_(0.15)Ga_(0.85)N/GaN 异质结构场效应晶体管(HFET),解释了光照下器件跨导和电流的增加是由于沟道中产生的俘获正电荷和导电电子造成的。这些俘获正电荷和导电电子使器件沟道中二维电子气的表面密度增至2×10^(12)cm^(-3),因而降低了源的串联电阻。 展开更多
关键词 场效应晶体管 异质结构 跨导
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