Structural Morphological and Optical Properties of SnSb_2S_4 Thin Films Grown by Vacuum Evaporation Method

SnSb2S4 thin films were prepared from powder by thermal evaporation under vacuum of 1.33 × 10^-4 Pa （ 10^-6 Torr） on unheated glass substrates. The effect of thickness on the structural, morphological and optical properties of SnSb2S4 thin films was investigated. Films thickness measured by interference fringes method varied from 50 to 700 nm. X-ray diffraction analysis revealed that all the SnSb2S4 films were polycrystalline in spite without heating the substrates and the crystallinity was improved with increasing film thickness. The microstructure parameters： crystallite size, strain and dislocation density were calculated. It was observed that the crystallite size increased and the crystal defects decreased with increasing film thickness. In addition, by increasing the film thickness, an enhancement in the surface roughness root-mean-square （RMS） increased from 2.0 to 6.6 nm. The fundamental optical parameters like band gap, absorption and extinction coefficient were calculated in the strong absorption region of transmittance and reflectance spectrum. The optical absorption measurements indicated that the band （Eg） gap of the thin films decreased from 2.10 to 1.65 eV with increasing film thickness. The refractive indexes were evaluated in transparent region in terms of envelope method, which was suggested by Swanepoul. It was observed that the refractive index increased with increasing film thickness.

Optical Constant and Electrical Resistivity of Annealed Sn3Sb2S6 Thin Films

In this study,we report the annealing effects on the physical properties of Sn_3Sb_2S_6 thin films.Sn_3Sb_2S_6 thin films were prepared onto non-heated glass substrates via thermal evaporation technique.The as-deposited films were annealed in air for 1 h in the temperature range from 100 to 300 °C.X-ray diffraction results show that the crystallinity of the thin films increased after annealing.The microstructure parameters crystallite size,dislocation density,lattice strain and stacking fault probability were calculated.The optical properties were obtained from the analysis of the experimental recorded transmittance and reflectance spectral data over the wavelength range 300–1800 nm.High absorption coefficient（10~5cm^（-1）） reached to the visible and near-IR spectral range.A decrease in optical band gap from 1.92 to 1.71 e V by increasing the air annealing temperature was observed.Oscillator energy E_o and dispersion energy E_d of the films after annealing were estimated according to the model of Wemple–Di Domenico single oscillator.Spitzer–Fan model was applied to determine the electron free carrier susceptibility and the ratio of carrier concentration to the effective mass.The layers annealed at temperatures 〉150 ℃ undergo abrupt changes in their electrical properties and exhibit a resistive hysteresis behavior.These properties confer to the material interest perspectives for its application in diverse advanced technologies such as photovoltaic applications and optical storage.