We have developed a uniform and dense epitaxial thinfilm of 0.94(Bi_(0.5)Na_(0.5))TiO_(3)-0.04×(Bi_(0.5)Na_(0.5))TiO_(3)-0.02BaTiO_(3)on a SrRuO_(3)coated SrTiO_(3)substrate by pulsed laser deposition method.The ...We have developed a uniform and dense epitaxial thinfilm of 0.94(Bi_(0.5)Na_(0.5))TiO_(3)-0.04×(Bi_(0.5)Na_(0.5))TiO_(3)-0.02BaTiO_(3)on a SrRuO_(3)coated SrTiO_(3)substrate by pulsed laser deposition method.The remnant polarization,coercivefield and dielectric constant of thefilm with thickness of 315 nm,were measured to be 16.6μC·cm^(-2),147.5 kV·cm^(-1)and 640(at 1 kHz),respectively.Thefilm exhibited a high breakdown voltage and low leakage current of 1.1×10^(-5)A·cm^(-2)at 310 kV·cm^(-1).This(Bi_(0.5)Na_(0.5))TiO_(3)-based thinfilm with a target composition in the rhombohedral side of the morphotropic phase boundary can be considered a potential candidate for relatively high power applications.展开更多
基金The-nancial support of this work by the Glenn Howatt foundation is sincerely appreciated by the authors.
文摘We have developed a uniform and dense epitaxial thinfilm of 0.94(Bi_(0.5)Na_(0.5))TiO_(3)-0.04×(Bi_(0.5)Na_(0.5))TiO_(3)-0.02BaTiO_(3)on a SrRuO_(3)coated SrTiO_(3)substrate by pulsed laser deposition method.The remnant polarization,coercivefield and dielectric constant of thefilm with thickness of 315 nm,were measured to be 16.6μC·cm^(-2),147.5 kV·cm^(-1)and 640(at 1 kHz),respectively.Thefilm exhibited a high breakdown voltage and low leakage current of 1.1×10^(-5)A·cm^(-2)at 310 kV·cm^(-1).This(Bi_(0.5)Na_(0.5))TiO_(3)-based thinfilm with a target composition in the rhombohedral side of the morphotropic phase boundary can be considered a potential candidate for relatively high power applications.
