Tin sulfide thin films （Snx Sy） with an atomic ratio of y/x = 0.5 have been deposited on a glass substrate by spray pyrolysis. The effects of deposition parameters, such as spray solution rate （R）, substrate tempe...Tin sulfide thin films （Snx Sy） with an atomic ratio of y/x = 0.5 have been deposited on a glass substrate by spray pyrolysis. The effects of deposition parameters, such as spray solution rate （R）, substrate temperature （Ts） and film thickness （t）, on the structural, optical, thermo-electrical and photoconductivity related properties of the films have been studied. The precursor solution was prepared by dissolving tin chloride （SnC14, 5H2O） and thiourea in propanol, and SnxSy thin film was prepared with a mole ratio of y/x = 0.5. The prepared films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and UV-vis spectroscopy. It is indicated that the XRD patterns of SnxSy films have amorphous and polycrystalline structures and the size of the grains has been changed from 7 to 16 nm. The optical gap of SnxSy thin films is determined to be about 2.41 to 3.08 eV by a plot of the variation of （αhv）2 versus h v related to the change of deposition conditions. The thermoelectric and photo-conductivity measurement results for the films show that these properties are depend considerably on the deposition parameters.展开更多
文摘Tin sulfide thin films （Snx Sy） with an atomic ratio of y/x = 0.5 have been deposited on a glass substrate by spray pyrolysis. The effects of deposition parameters, such as spray solution rate （R）, substrate temperature （Ts） and film thickness （t）, on the structural, optical, thermo-electrical and photoconductivity related properties of the films have been studied. The precursor solution was prepared by dissolving tin chloride （SnC14, 5H2O） and thiourea in propanol, and SnxSy thin film was prepared with a mole ratio of y/x = 0.5. The prepared films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and UV-vis spectroscopy. It is indicated that the XRD patterns of SnxSy films have amorphous and polycrystalline structures and the size of the grains has been changed from 7 to 16 nm. The optical gap of SnxSy thin films is determined to be about 2.41 to 3.08 eV by a plot of the variation of （αhv）2 versus h v related to the change of deposition conditions. The thermoelectric and photo-conductivity measurement results for the films show that these properties are depend considerably on the deposition parameters.
