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Design of current mirror integration ROIC for snapshot mode operation
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作者 Hari Shanker Gupta A S Kiran Kumar +4 位作者 m.shojaei baghini Subhananda Chakrabarti Sanjeev Mehta Arup Roy Chowdhury Dinesh K Sharma 《Journal of Semiconductors》 EI CAS CSCD 2016年第10期68-74,共7页
Current mirror integration(CMI) read out integrated circuit(ROIC) topology provides a low input impedance to photo-detectors and provides large injection efficiency, large charge handling capacity and snapshot mod... Current mirror integration(CMI) read out integrated circuit(ROIC) topology provides a low input impedance to photo-detectors and provides large injection efficiency, large charge handling capacity and snapshot mode operation without in-pixel opamps. The ROIC described in this paper has been implemented with a modified current mirror circuit, with matched PMOS pairs for detector input stage and its biasing. The readout circuit has been designed for 30×30μm^2 pixel size, 4×4 array size, variable frame rate, 5 Me charga pixel per second(Mpps).Experimental performance of the test chip has achieved 15 Me charge handling capacity, a high dynamic range of83 dB, 99.8% linearity and 99.96% injection efficiency. The ROIC design has been fabricated in 3.3 V 1P6 MUMC180 nm CMOS process and tested up to 5 MHz pixel rate at room and at cryogenic temperature. 展开更多
关键词 pixel pitch readout integrated circuit (ROIC) cryogenics SNAPSHOT FPA IR detectors
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