An nc-Si floating gate MOS structure is fabricated by thermal annealing of SiN_(x)/a-Si/SiO_(2).There are nc-Si dots isolated by a-Si due to partial crystallization.Conductance-voltage(G–V)measurements are performed ...An nc-Si floating gate MOS structure is fabricated by thermal annealing of SiN_(x)/a-Si/SiO_(2).There are nc-Si dots isolated by a-Si due to partial crystallization.Conductance-voltage(G–V)measurements are performed to investigate the effect of multiple interface states including Si-sub/SiO_(2),a-Si related(as-deposited sample)and nc-Si(annealed sample)in a charge trapping/releasing process.Double conductance peaks located in the depletion and weak inversion regions are found in our study.For the as-deposited sample,the Si-sub/SiO_(2) related G–V peak with weak intensity shifts to the negative as test frequency increases.The a-Si related G–V peak with strong intensity shifts slightly with the increasing frequency.For the annealed sample,little change appears in the intensity and shift of Si-sub/SiO_(2) related G–V peaks.The position of a-Si/nc-Si related peak is independent of frequency,and its intensity is weaker compared to that of the as-deposited sample.It is also found that as the size of nc-Si becomes larger,the a-Si/nc-Si related peak shifts to the depletion region due to the size effect of nc-Si.展开更多
Si-based ridge-waveguides with Bragg reflectors are fabricated based on our method.Three resonant peaks could be obviously identified from the photoluminescence spectra,and field patterns of these resonant peaks,simul...Si-based ridge-waveguides with Bragg reflectors are fabricated based on our method.Three resonant peaks could be obviously identified from the photoluminescence spectra,and field patterns of these resonant peaks,simulated by the finite difference time domain(FDTD)method,confirm that these peaks originate from cavity resonances.The resonant wavelengths and spatial angular distribution are given by the resonant models,which agree well with the experimental data.Experimentally,a simple method is proposed to testify the experimental and theoretical results.Such devices based on Bragg reflectors may have potential applications in light-emitting diodes,lasers and integrated photonic circuits.展开更多
Background Congenital heart disease （CHD） is the most common developmental anomaly in newborns. The germline mutations in GATA4 and NKX2.5 genes have been identified as responsible for CHD. The frequency of GATA4 an...Background Congenital heart disease （CHD） is the most common developmental anomaly in newborns. The germline mutations in GATA4 and NKX2.5 genes have been identified as responsible for CHD. The frequency of GATA4 and NKX2.5 mutations in Chinese Uygur patients with CHD and the correlation between their genotype and CHD phenotype are unknown. Methods We examined the coding region of GATA4 and NKX2,5genes in 62 Chinese Uygur patients with CHD and 117 Chinese Uygur individuals as the controls by denaturing high pedormance liquid chromatography （DHPLC） and sequencing. Results Two heterozygous missense mutations of c.1220C〉A and c.1273G〉A in GATA4 gene, which cause the amino acid residue changes of P407Q and D425N in GATA4, were found in a patient with tetralogy of Fallot and a patient with ventricular septal defect, respectively. The two patients did not have atrioventricular conduct defects or non-cardiac abnormalities. The two mutations are expected to affect the protein function. There were no reported NKX2.5 mutations in the patients. Conclusion Our results provided the primary data on CHD phenotype associated with GATA4 mutation in the Chinese Uygur population.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2010CB934402the National Natural Science Foundation of China under Grant Nos 61071008,10974091,and 60976001the Fundamental Research Funds for the Central Universities under Grant Nos 1095021030,1116021004,and 1114021005.
文摘An nc-Si floating gate MOS structure is fabricated by thermal annealing of SiN_(x)/a-Si/SiO_(2).There are nc-Si dots isolated by a-Si due to partial crystallization.Conductance-voltage(G–V)measurements are performed to investigate the effect of multiple interface states including Si-sub/SiO_(2),a-Si related(as-deposited sample)and nc-Si(annealed sample)in a charge trapping/releasing process.Double conductance peaks located in the depletion and weak inversion regions are found in our study.For the as-deposited sample,the Si-sub/SiO_(2) related G–V peak with weak intensity shifts to the negative as test frequency increases.The a-Si related G–V peak with strong intensity shifts slightly with the increasing frequency.For the annealed sample,little change appears in the intensity and shift of Si-sub/SiO_(2) related G–V peaks.The position of a-Si/nc-Si related peak is independent of frequency,and its intensity is weaker compared to that of the as-deposited sample.It is also found that as the size of nc-Si becomes larger,the a-Si/nc-Si related peak shifts to the depletion region due to the size effect of nc-Si.
基金by the National Natural Science Foundation of China under Grant Nos 60806015 and 10974091the Project of Education Department of Anhui Province(KJ2008B018).
文摘Si-based ridge-waveguides with Bragg reflectors are fabricated based on our method.Three resonant peaks could be obviously identified from the photoluminescence spectra,and field patterns of these resonant peaks,simulated by the finite difference time domain(FDTD)method,confirm that these peaks originate from cavity resonances.The resonant wavelengths and spatial angular distribution are given by the resonant models,which agree well with the experimental data.Experimentally,a simple method is proposed to testify the experimental and theoretical results.Such devices based on Bragg reflectors may have potential applications in light-emitting diodes,lasers and integrated photonic circuits.
基金This study was supported by the grants from the National Natural Science Foundation of China （No.30672193） and the National Science Foundation of Beijing （No. Y0204004040231）.The authors are grateful to the subjects for participating in this study. We also thank Dr. BU Ding-fang and Dr. ZHANG Hua for theh technical assistance.
文摘Background Congenital heart disease （CHD） is the most common developmental anomaly in newborns. The germline mutations in GATA4 and NKX2.5 genes have been identified as responsible for CHD. The frequency of GATA4 and NKX2.5 mutations in Chinese Uygur patients with CHD and the correlation between their genotype and CHD phenotype are unknown. Methods We examined the coding region of GATA4 and NKX2,5genes in 62 Chinese Uygur patients with CHD and 117 Chinese Uygur individuals as the controls by denaturing high pedormance liquid chromatography （DHPLC） and sequencing. Results Two heterozygous missense mutations of c.1220C〉A and c.1273G〉A in GATA4 gene, which cause the amino acid residue changes of P407Q and D425N in GATA4, were found in a patient with tetralogy of Fallot and a patient with ventricular septal defect, respectively. The two patients did not have atrioventricular conduct defects or non-cardiac abnormalities. The two mutations are expected to affect the protein function. There were no reported NKX2.5 mutations in the patients. Conclusion Our results provided the primary data on CHD phenotype associated with GATA4 mutation in the Chinese Uygur population.
