measurement system was designed and established to test the piezoresistive properties of resonant tunneling diodes(RTDs).The current-voltage characteristic shifts of RTD at different stress states were detected.The ex...measurement system was designed and established to test the piezoresistive properties of resonant tunneling diodes(RTDs).The current-voltage characteristic shifts of RTD at different stress states were detected.The experimental results demonstrate that the piezoresistive sensitivity of RTD is larger than 1x10−8 Pa−1.To accurately represent the piezoresistive properties of RTD,the current-voltage characteristic coherence of the same RTD was tested.According to the experimental results,the largest relative resistance shift of an RTD in the same measurement environment is less than 3%,of which 1%is caused by the testing apparatuses.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.50405025 and 50375050)the Fork Ying Tung Education Foundation(No.101052).
文摘measurement system was designed and established to test the piezoresistive properties of resonant tunneling diodes(RTDs).The current-voltage characteristic shifts of RTD at different stress states were detected.The experimental results demonstrate that the piezoresistive sensitivity of RTD is larger than 1x10−8 Pa−1.To accurately represent the piezoresistive properties of RTD,the current-voltage characteristic coherence of the same RTD was tested.According to the experimental results,the largest relative resistance shift of an RTD in the same measurement environment is less than 3%,of which 1%is caused by the testing apparatuses.