Lithium niobate on insulator(LNOI)has become an intriguing platform for integrated photonics for applications in communications,microwave photonics,and computing.Whereas,integrated devices including modulators,resonat...Lithium niobate on insulator(LNOI)has become an intriguing platform for integrated photonics for applications in communications,microwave photonics,and computing.Whereas,integrated devices including modulators,resonators,and lasers with high performance have been recently realized on the LNOI platform,high-speed photodetectors,an essential building block in photonic integrated circuits,have not been demonstrated on LNOI yet.Here,we demonstrate for the first time,heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength.The photodiodes are based on an n-down In GaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth.Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform.展开更多
We directly measure optical bound states in the continuum(BICs)by embedding a photodetector into a photonic crystal slab.The BICs observed in our experiment are the result of accidental phase matching between incident...We directly measure optical bound states in the continuum(BICs)by embedding a photodetector into a photonic crystal slab.The BICs observed in our experiment are the result of accidental phase matching between incident,reflected and in-plane waves at seemingly random wave vectors in the photonic band structure.Our measurements were confirmed through a rigorously coupled-wave analysis simulation in conjunction with temporal coupled mode theory.Polarization mixing between photonic crystal slab modes was observed and described using a plane wave expansion simulation.The ability to probe the field intensity inside the photonic crystal and thereby to directly measure BICs represents a milestone in the development of integrated opto-electronic devices based on BICs.展开更多
基金National Science Foundation(2023775)Air Force Office of Scientific Research(FA 9550-17-1-0071)Defense Advanced Research Projects Agency(HR0011-20-C-0137)。
文摘Lithium niobate on insulator(LNOI)has become an intriguing platform for integrated photonics for applications in communications,microwave photonics,and computing.Whereas,integrated devices including modulators,resonators,and lasers with high performance have been recently realized on the LNOI platform,high-speed photodetectors,an essential building block in photonic integrated circuits,have not been demonstrated on LNOI yet.Here,we demonstrate for the first time,heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength.The photodiodes are based on an n-down In GaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth.Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform.
基金supported by the Austrian Science Funds(FWF):F 4909-N23(Next Lite)the PLATON project 35N within the Austrian NANO Initiative+1 种基金the‘Gesellschaft für Mikro-und Nanoelektronik’GMesupport from the European Research Council under the European Union’s Horizon 2020 research and innovation program(Grant Agreement No.639109).
文摘We directly measure optical bound states in the continuum(BICs)by embedding a photodetector into a photonic crystal slab.The BICs observed in our experiment are the result of accidental phase matching between incident,reflected and in-plane waves at seemingly random wave vectors in the photonic band structure.Our measurements were confirmed through a rigorously coupled-wave analysis simulation in conjunction with temporal coupled mode theory.Polarization mixing between photonic crystal slab modes was observed and described using a plane wave expansion simulation.The ability to probe the field intensity inside the photonic crystal and thereby to directly measure BICs represents a milestone in the development of integrated opto-electronic devices based on BICs.
