Position annihilation measurements show that the radiation defects and secondary defects in neutron-transmutation-doped(NTD)Si irradiated by two neutron doses can he removed at 600-650℃。The concentration and anneali...Position annihilation measurements show that the radiation defects and secondary defects in neutron-transmutation-doped(NTD)Si irradiated by two neutron doses can he removed at 600-650℃。The concentration and annealing behavior of V-type and Vo defects are related to the neutron doses.V_(4 )appears at 150℃ and 450℃-550℃ in NTD Si irradiated by higher neutron dose.展开更多
It has been found that the hydrogen-dtfect shallow donors do not appear,and some strong neutron radiation-induced Si-H IR bands,such as 1882 and 2054cm^(-1) disappear;but the strength of some others,e.g.1979 and 2065c...It has been found that the hydrogen-dtfect shallow donors do not appear,and some strong neutron radiation-induced Si-H IR bands,such as 1882 and 2054cm^(-1) disappear;but the strength of some others,e.g.1979 and 2065cm^(-1) increases greatly for NTD FZ(H_(2))Si kept at room temperature for 3 years.These changes indicate that at room temperature simple point defects diffuse and interact,and hydrogen atoms trap the vacancy and vacancy cluster defects.This gives important information in the discussion of the micro-structures of the above Si-H IR bands.展开更多
It has been found that after the irradiation by fast neutrons the electron density and mobility of two-dimensional(2D)electron gas at modulation-doped GaAs/AlGaAs heterostructure interface increased by 17%and 23%,resp...It has been found that after the irradiation by fast neutrons the electron density and mobility of two-dimensional(2D)electron gas at modulation-doped GaAs/AlGaAs heterostructure interface increased by 17%and 23%,respectively,and the Hall plateaus and the minima of Shubnikov-de Haas(S-dH)oscillation curves anomalously shifted over each other.The measurements after three weeks showed that the effects mentioned above had disappeared substantially,however,the stronger persistent photoconductivity still remained.展开更多
文摘Position annihilation measurements show that the radiation defects and secondary defects in neutron-transmutation-doped(NTD)Si irradiated by two neutron doses can he removed at 600-650℃。The concentration and annealing behavior of V-type and Vo defects are related to the neutron doses.V_(4 )appears at 150℃ and 450℃-550℃ in NTD Si irradiated by higher neutron dose.
文摘It has been found that the hydrogen-dtfect shallow donors do not appear,and some strong neutron radiation-induced Si-H IR bands,such as 1882 and 2054cm^(-1) disappear;but the strength of some others,e.g.1979 and 2065cm^(-1) increases greatly for NTD FZ(H_(2))Si kept at room temperature for 3 years.These changes indicate that at room temperature simple point defects diffuse and interact,and hydrogen atoms trap the vacancy and vacancy cluster defects.This gives important information in the discussion of the micro-structures of the above Si-H IR bands.
文摘It has been found that after the irradiation by fast neutrons the electron density and mobility of two-dimensional(2D)electron gas at modulation-doped GaAs/AlGaAs heterostructure interface increased by 17%and 23%,respectively,and the Hall plateaus and the minima of Shubnikov-de Haas(S-dH)oscillation curves anomalously shifted over each other.The measurements after three weeks showed that the effects mentioned above had disappeared substantially,however,the stronger persistent photoconductivity still remained.
