This paper reports the fabrication and properties of small Nb-(a-Si)-Nb-(a-Si)-Nb Josephson tunnel junctions.The smallest junction area is about 0.3μm^(2).A thin a-Si film deposited by electron beam evaporation was o...This paper reports the fabrication and properties of small Nb-(a-Si)-Nb-(a-Si)-Nb Josephson tunnel junctions.The smallest junction area is about 0.3μm^(2).A thin a-Si film deposited by electron beam evaporation was oxidized and used for the tunnel barriers.TEM and XPS investigations indicate that the barrier layers consist of SiOx and Si.The junctions have been used for RF SQUID with an energy resolution of 1.9×l0^(-28) J/Hz.展开更多
Nb_(3)Sn-Pb Josephson tunnel juntions were fabricated using Nb_(3)Sn thin films formed by a simple ooevaporation technique,while the tunnel barriers were formed by RF oxidation in an Ar and O_(2) gas mixture.The I-V c...Nb_(3)Sn-Pb Josephson tunnel juntions were fabricated using Nb_(3)Sn thin films formed by a simple ooevaporation technique,while the tunnel barriers were formed by RF oxidation in an Ar and O_(2) gas mixture.The I-V characteristics were measured at 4.2K,in which a sharp current rise at the gap voltage of 4.35mV was observed.The ratio of the subgap resistance to the normal one is as high as 6.The NbgSn-Pb tunnel junction prepared are of good quality.展开更多
文摘This paper reports the fabrication and properties of small Nb-(a-Si)-Nb-(a-Si)-Nb Josephson tunnel junctions.The smallest junction area is about 0.3μm^(2).A thin a-Si film deposited by electron beam evaporation was oxidized and used for the tunnel barriers.TEM and XPS investigations indicate that the barrier layers consist of SiOx and Si.The junctions have been used for RF SQUID with an energy resolution of 1.9×l0^(-28) J/Hz.
文摘Nb_(3)Sn-Pb Josephson tunnel juntions were fabricated using Nb_(3)Sn thin films formed by a simple ooevaporation technique,while the tunnel barriers were formed by RF oxidation in an Ar and O_(2) gas mixture.The I-V characteristics were measured at 4.2K,in which a sharp current rise at the gap voltage of 4.35mV was observed.The ratio of the subgap resistance to the normal one is as high as 6.The NbgSn-Pb tunnel junction prepared are of good quality.
