Heterogeneously integrated lasers in the O-band are a key component in realizring low-power optical interconnects for data centers and high-performance computing.Quantum-dot-based materials have been particularly appe...Heterogeneously integrated lasers in the O-band are a key component in realizring low-power optical interconnects for data centers and high-performance computing.Quantum-dot-based materials have been particularly appealing for light generation due to their ultralow lasing thresholds,small linewidth enhancement factor,and low sensitivity to reflections.Here,we present widely tunable quantum-dot lasers heterogencously integrated on silicon-on-insulator substrate.The tuning mechanism is based on Vernier dual-ring geometry,and a 47nm tuning range with 52 dB side-mode suppression ratio is observed.These parameters show an increase to 52nm and 58 dB,respectively,when an additional wavelength filter in the form of a Mach-Zehnder interferometer is added to the cavity.The Lorentzian linewidth of the lasers is measured as low as 5.3 kHz.展开更多
基金Defense Advanced Research Projects Agency(HROO11-19-C-0083)Advanced Research Projects Agency-Energy(DE-AR0001039).
文摘Heterogeneously integrated lasers in the O-band are a key component in realizring low-power optical interconnects for data centers and high-performance computing.Quantum-dot-based materials have been particularly appealing for light generation due to their ultralow lasing thresholds,small linewidth enhancement factor,and low sensitivity to reflections.Here,we present widely tunable quantum-dot lasers heterogencously integrated on silicon-on-insulator substrate.The tuning mechanism is based on Vernier dual-ring geometry,and a 47nm tuning range with 52 dB side-mode suppression ratio is observed.These parameters show an increase to 52nm and 58 dB,respectively,when an additional wavelength filter in the form of a Mach-Zehnder interferometer is added to the cavity.The Lorentzian linewidth of the lasers is measured as low as 5.3 kHz.
