Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effectiv...Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated with展开更多
The understanding of mechanisms of damage evolution in silicon carbide bombarded with energetic heliumions is important for the use of this material in future fusion reactors. One interesting result from our recentTEM...The understanding of mechanisms of damage evolution in silicon carbide bombarded with energetic heliumions is important for the use of this material in future fusion reactors. One interesting result from our recentTEM study of defect production in helium-implanted 4H-SiC is the rather high dose threshold for the forma-tion of nanometric helium bubbles This may supply an explanation for the observed defect depleted zone near the surface of silicon carbide. While the defect depleted zone is believed to be the reason of the high resistance of SiC nanocrystals and fibers to heavy irradiation.展开更多
文摘Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated with
文摘The understanding of mechanisms of damage evolution in silicon carbide bombarded with energetic heliumions is important for the use of this material in future fusion reactors. One interesting result from our recentTEM study of defect production in helium-implanted 4H-SiC is the rather high dose threshold for the forma-tion of nanometric helium bubbles This may supply an explanation for the observed defect depleted zone near the surface of silicon carbide. While the defect depleted zone is believed to be the reason of the high resistance of SiC nanocrystals and fibers to heavy irradiation.
