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适用于数模混合集成的SOI MOSFET的失真分析 被引量:1
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作者 张国艳 廖怀林 +3 位作者 黄如 mansun chan 张兴 王阳元 《电子学报》 EI CAS CSCD 北大核心 2002年第2期232-235,共4页
本文较为详细地分析了SOIMOSFET的失真行为 .利用幂级数方法对不同结构包括部分耗尽PD、全耗尽FD和体接触BC的SOI器件的谐波失真进行了对比性的实验研究 .同时 ,在实验分析的基础上提出了描述失真行为的连续的SOIMOSFET失真模型 .该模... 本文较为详细地分析了SOIMOSFET的失真行为 .利用幂级数方法对不同结构包括部分耗尽PD、全耗尽FD和体接触BC的SOI器件的谐波失真进行了对比性的实验研究 .同时 ,在实验分析的基础上提出了描述失真行为的连续的SOIMOSFET失真模型 .该模型通过引入平滑函数和主要的影响失真的物理机制 ,使得模拟计算结果能够与实验结果较好的吻合 .本文所得到的结果可用于低失真的数模混合电路的设计 ,并对低失真电路的优化提供指导方向 . 展开更多
关键词 场效应晶体管 数模混合集成 失真分析 SOI MOSFET
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一个解析的适用于短沟SOI MOSFET’s的高频噪声模型
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作者 张国艳 廖怀林 +3 位作者 黄如 mansun chan 张兴 王阳元 《电子学报》 EI CAS CSCD 北大核心 2002年第11期1601-1604,共4页
提出了一个新的解析的适用于SOIMOSFET’s的高频噪声模型 .该模型通过耦合能量平衡方程克服了以往噪声模型所具有的缺点 ,并对短沟SOI器件的噪声给出精确地描述 .同时 ,利用该模型可以容易地计算出相对于最小噪声值处的优化的栅源电压 ... 提出了一个新的解析的适用于SOIMOSFET’s的高频噪声模型 .该模型通过耦合能量平衡方程克服了以往噪声模型所具有的缺点 ,并对短沟SOI器件的噪声给出精确地描述 .同时 ,利用该模型可以容易地计算出相对于最小噪声值处的优化的栅源电压 ,为低噪声的电路设计提供优化的设计方向 .由于该噪声模型的简单性 ,可以很方便地将模型植入电路模拟器如SPICE中完成电路设计 . 展开更多
关键词 SOI MOSFET's 高频噪声 模型 短沟SOI器件 热噪声
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Design and Verification of a High Performance LED Driver with an Efficient Current Sensing Architecture
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作者 Jin He Wing Yan Leung +7 位作者 Tsz Yin Man Lin He Hailang Liang Aixi Zhang Qingxing He Caixia Du Xiaomeng He mansun chan 《Circuits and Systems》 2013年第5期393-400,共8页
A high power buck-boost switch-mode LED driver delivering a constant 350 mA with a power efficient current sensing scheme is presented in this paper. The LED current is extracted by differentiating the output capacito... A high power buck-boost switch-mode LED driver delivering a constant 350 mA with a power efficient current sensing scheme is presented in this paper. The LED current is extracted by differentiating the output capacitor voltage and maintained by a feedback. The circuit has been fabricated in a standard 0.35 μm AMS CMOS process. Measurement results demonstrated a power-conversion efficiency over 90% with a line regulation of 8%/V for input voltage of 3.3 V and current output between 200 mA and 350 mA. 展开更多
关键词 LED DRIVER Current Sensing CAPACITOR VOLTAGE FEEDBACK CIRCUIT
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Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks 被引量:13
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作者 Xumeng Zhang Jian Lu +11 位作者 Zhongrui Wang Rui Wang Jinsong Wei Tuo Shi Chunmeng Dou Zuheng Wu Jiaxue Zhu Dashan Shang Guozhong Xing mansun chan Qi Liu Ming Liu 《Science Bulletin》 SCIE EI CSCD 2021年第16期1624-1633,M0003,共11页
Spiking neural network,inspired by the human brain,consisting of spiking neurons and plastic synapses,is a promising solution for highly efficient data processing in neuromorphic computing.Recently,memristor-based neu... Spiking neural network,inspired by the human brain,consisting of spiking neurons and plastic synapses,is a promising solution for highly efficient data processing in neuromorphic computing.Recently,memristor-based neurons and synapses are becoming intriguing candidates to build spiking neural networks in hardware,owing to the close resemblance between their device dynamics and the biological counterparts.However,the functionalities of memristor-based neurons are currently very limited,and a hardware demonstration of fully memristor-based spiking neural networks supporting in-situ learning is very challenging.Here,a hybrid spiking neuron combining a memristor with simple digital circuits is designed and implemented in hardware to enhance neuron functions.The hybrid neuron with memristive dynamics not only realizes the basic leaky integrate-and-fire neuron function but also enables the in-situ tuning of the connected synaptic weights.Finally,a fully hardware spiking neural network with the hybrid neurons and memristive synapses is experimentally demonstrated for the first time,and in-situ Hebbian learning is achieved with this network.This work opens up a way towards the implementation of spiking neurons,supporting in-situ learning for future neuromorphic computing systems. 展开更多
关键词 MEMRISTOR Hybrid neuron In-situ learning Fully hardware Spiking neural network
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Diode parameter extraction by a linear cofactor difference operation method
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作者 马晨月 张辰飞 +3 位作者 王昊 何进 林信南 mansun chan 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第11期43-46,共4页
The linear cofactor difference operator(LCDO) method,a direct parameter extraction method for general diodes,is presented.With the developed LCDO method,the extreme spectral characteristic of the diode voltage-curre... The linear cofactor difference operator(LCDO) method,a direct parameter extraction method for general diodes,is presented.With the developed LCDO method,the extreme spectral characteristic of the diode voltage-current curves is revealed,and its extreme positions are related to the diode characteristic parameters directly.The method is applied to diodes with different sizes and temperatures,and the related characteristic parameters,such as reverse saturation current,series resistance and non-ideality factor,are extracted directly.The extraction result shows good agreement with the experimental data. 展开更多
关键词 LCDO DIODE parameter extraction ideality factor series resistance
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