Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors(HEMTs)are experimentally investigated.It is observed that the reverse leakage current between the ...Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors(HEMTs)are experimentally investigated.It is observed that the reverse leakage current between the gate and source decreases after the off-state stress,whereas the current between the gate and drain increases.By analyzing those changes of the reverse currents based on the Frenkel–Poole model,we realize that the ionization of fluorine ions occurs during the off-state stress.Furthermore,threshold voltage degradation is also observed after the off-state stress,but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are different.By comparing the differences between those devices,we find that the F-ions incorporated in the GaN buffer layer play an important role in averting degradation.Lastly,suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.展开更多
基金Project supported by the Laboratory Open Fund of Beijing Smart-Chip Microelectronics Technology Co.,Ltdthe National Natural Science Foundation of China(Grant Nos.11690042 and 12035019)+1 种基金the National Major Scientific Research Instrument Projects(Grant No.61727804)the Natural Science Foundation of Shaanxi Province,China(Grant No.2022-JM-386)。
文摘Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors(HEMTs)are experimentally investigated.It is observed that the reverse leakage current between the gate and source decreases after the off-state stress,whereas the current between the gate and drain increases.By analyzing those changes of the reverse currents based on the Frenkel–Poole model,we realize that the ionization of fluorine ions occurs during the off-state stress.Furthermore,threshold voltage degradation is also observed after the off-state stress,but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are different.By comparing the differences between those devices,we find that the F-ions incorporated in the GaN buffer layer play an important role in averting degradation.Lastly,suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.
