Crystalline TiO（P25） and isolated titanate species in a ZSM-5 structure（TS-1） were modified with Au and Ag, respectively, and tested in the gas-phase photocatalytic COreduction under high purity conditions. The no...Crystalline TiO（P25） and isolated titanate species in a ZSM-5 structure（TS-1） were modified with Au and Ag, respectively, and tested in the gas-phase photocatalytic COreduction under high purity conditions. The noble metal modification was performed by photodeposition. Light absorbance properties of the catalysts are examined with UV–Vis spectroscopy before and after the activity test. In the gas-phase photocatalytic COreduction, it was observed that the catalysts with Ag nanostructures are more active than those with Au nanostructures. It is thus found that the energetic difference between the band gap energy of the semiconductor and the position of the plasmon is influencing the photocatalytic activity.Potentially, plasmon excitation due to visible light absorption results in plasmon resonance energy, which affects the excitation of the semiconductor positively. Therefore, an overlap between band gap energy of the semiconductor and metal plasmon is needed.展开更多
文摘Crystalline TiO（P25） and isolated titanate species in a ZSM-5 structure（TS-1） were modified with Au and Ag, respectively, and tested in the gas-phase photocatalytic COreduction under high purity conditions. The noble metal modification was performed by photodeposition. Light absorbance properties of the catalysts are examined with UV–Vis spectroscopy before and after the activity test. In the gas-phase photocatalytic COreduction, it was observed that the catalysts with Ag nanostructures are more active than those with Au nanostructures. It is thus found that the energetic difference between the band gap energy of the semiconductor and the position of the plasmon is influencing the photocatalytic activity.Potentially, plasmon excitation due to visible light absorption results in plasmon resonance energy, which affects the excitation of the semiconductor positively. Therefore, an overlap between band gap energy of the semiconductor and metal plasmon is needed.
