The ridge morphology,which is related to random atomic step meandering,appears in thick AlInGaN films grown by metal organic chemical vapor deposition on both GaN templates and free-standing GaN substrates;this can be...The ridge morphology,which is related to random atomic step meandering,appears in thick AlInGaN films grown by metal organic chemical vapor deposition on both GaN templates and free-standing GaN substrates;this can be primarily attributed to the in-plane compressive strain in the thick layer.Therefore,a 2.5-μm Al 0.08 In 0.0123 GaN film with a slightly tensive strain was grown,with a regular and smooth step-flow morphology;the root mean square deviation of the film(with a size of 5μm×5μm)was 0.56 nm.展开更多
基金supported by National Natural Science Foundation of China(Grants No.61834008,61574160,61804164 and 61704184)National Key Research and Development Program of China(Grants No.2017YFE0131500 and 2017YFB0405000)+2 种基金Natural Science Foundation of Jiangsu Province(Grant No.BK20180254)Key Research and Devel-opment Program of Jiangsu Province(Grant No.BE2020004)China Postdoctoral Science Foundation(Grant No.2018M630619).
文摘The ridge morphology,which is related to random atomic step meandering,appears in thick AlInGaN films grown by metal organic chemical vapor deposition on both GaN templates and free-standing GaN substrates;this can be primarily attributed to the in-plane compressive strain in the thick layer.Therefore,a 2.5-μm Al 0.08 In 0.0123 GaN film with a slightly tensive strain was grown,with a regular and smooth step-flow morphology;the root mean square deviation of the film(with a size of 5μm×5μm)was 0.56 nm.
