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Gold-vapor-assisted chemical vapor deposition of aligned monolayer WSe2 with large domain size and fast growth rate 被引量:1
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作者 Mingrui Chen Anyi Zhang +10 位作者 Yihang Liu Dingzhou Cui Zhen Li Yu-Han Chung Sai Praneetha Mutyala matthew mecklenburg Xiao Nie Chi Xu Fanqi Wu Qingzhou Liu Chongwu Zhou Mork 《Nano Research》 SCIE EI CAS CSCD 2020年第10期2625-2631,共7页
Orientation-controlled growth of two-dimensional(2D)transition metal dichalcogenides(TMDCs)may enable many new electronic and optical applications.However,previous studies reporting aligned growth of WSe2 usually yiel... Orientation-controlled growth of two-dimensional(2D)transition metal dichalcogenides(TMDCs)may enable many new electronic and optical applications.However,previous studies reporting aligned growth of WSe2 usually yielded very small domain sizes.Herein,we introduced gold vapor into the chemical vapor deposition(CVD)process as a catalyst to assist the growth of WSe2 and successfully achieved highly aligned monolayer WSe2 triangular flakes grown on c-plane sapphire with large domain sizes(130μm)and fast growth rate(4.3μm·s^−1).When the aligned WSe2 domains merged together,a continuous monolayer WSe2 was formed with good uniformity.After transferring to Si/SiO2 substrates,field effect transistors were fabricated on the continuous monolayer WSe2,and an average mobility of 12 cm^2·V^−1·s−1 was achieved,demonstrating the good quality of the material.This report paves the way to study the effect of catalytic metal vapor in the CVD process of TMDCs and contributes a novel approach to realize the growth of aligned TMDC flakes. 展开更多
关键词 two-dimensional materials transition metal dichalcogenides tungsten diselenide(WSe2) chemical vapor deposition aligned growth
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