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Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system 被引量:1
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作者 Mark N.Lockrey matthew r.phillips 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第1期1-2,共2页
We demonstrate the ability of a combined scanning electron microscope and cathodoluminescence (CL) spectral mapping system to provide important spatially resolved information. The degree of inhomogeneity in spectral... We demonstrate the ability of a combined scanning electron microscope and cathodoluminescence (CL) spectral mapping system to provide important spatially resolved information. The degree of inhomogeneity in spectral output across a multi-quantum well sample is measured using the SEM-CL system as well as measuring the efficiency roll-off with increasing carrier concentration. The effects of low energy electron beam modification on the InGaN/GaN multi quantum wells have also been characterized. 展开更多
关键词 InGaN/GaN quantum wells CATHODOLUMINESCENCE spectral mapping electron beam irradiation
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