Lao.7Sr0.3Mnl_xNixO3 （x = 0, 0.025, 0.050 and 0.075） ceramics were prepared by the conventional solid-state reaction method. The partial substitution of Mn by Ni2＋ leads to a decrease in cell volume as well as a st...Lao.7Sr0.3Mnl_xNixO3 （x = 0, 0.025, 0.050 and 0.075） ceramics were prepared by the conventional solid-state reaction method. The partial substitution of Mn by Ni2＋ leads to a decrease in cell volume as well as a structural transition from the rhombohedral to the orthorhombic structure. Ni2＋ doping increases the electrical resistivity, decreases the semiconductor-metal transition temperature （Tms） and relatively enhances the room temperature magnetoresistance （MR）, especially in x = 0.025 and around Tins. With respect to conduction mechanism, the small polaron hopping （SPH） and the variable range hopping （VRH） models were used to ex- amine conduction in the semiconducting region.展开更多
基金financially supported by Sohag University in Egypt
文摘Lao.7Sr0.3Mnl_xNixO3 （x = 0, 0.025, 0.050 and 0.075） ceramics were prepared by the conventional solid-state reaction method. The partial substitution of Mn by Ni2＋ leads to a decrease in cell volume as well as a structural transition from the rhombohedral to the orthorhombic structure. Ni2＋ doping increases the electrical resistivity, decreases the semiconductor-metal transition temperature （Tms） and relatively enhances the room temperature magnetoresistance （MR）, especially in x = 0.025 and around Tins. With respect to conduction mechanism, the small polaron hopping （SPH） and the variable range hopping （VRH） models were used to ex- amine conduction in the semiconducting region.
