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Gas selectivity of SILAR grown CdS nano-bulk junction
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作者 R.Jayakrishnan Varun G Nair +1 位作者 Akhil M Anand meera venugopal 《Journal of Semiconductors》 EI CAS CSCD 2018年第3期8-13,共6页
Nano-particles of cadmium sulphide were deposited on cleaned copper substrate by an automated se- quential ionic layer adsorption reaction (SILAR) system. The grown nano-bulk junction exhibits Schottky diode behavio... Nano-particles of cadmium sulphide were deposited on cleaned copper substrate by an automated se- quential ionic layer adsorption reaction (SILAR) system. The grown nano-bulk junction exhibits Schottky diode behavior. The response of the nano-bulk junction was investigated under oxygen and hydrogen atmospheric condi- tions. The gas response ratio was found to be 198% for Oxygen and 34% for Hydrogen at room temperature. An increase in the operating temperature of the nano-bulk junction resulted in a decrease in their gas response ratio. A logarithmic dependence on the oxygen partial pressure to the junction response was observed, indicating a Temkin isothermal behavior. Work function measurements using a Kelvin probe demonstrate that the exposure to an oxy- gen atmosphere fails to effectively separate the charges due to the built-in electric field at the interface. Based on the benefits like simple structure, ease of fabrication and response ratio the studied device is a promising candidate for gas detection applications. 展开更多
关键词 Cu/CdS nano-bulk junction hydrogen work function gas response ratio
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