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Assessment of Nanothermodynamic Properties of Ferromagnetic Nanocluster in Subdivision Potential Approach and Magnetic Field
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作者 mehdi simiari Ramin Roozehdar Mogaddam +2 位作者 Meysam Ghaebi Elham Farshid Mohammad Ebrahim Zomorrodian 《Journal of Applied Mathematics and Physics》 2016年第12期2233-2246,共15页
Using subdivision potential approach and mean-field theory for a ferromagnetic cluster, we obtained nanothermodynamic properties for a ferromagnetic nanocluster in the presence and also the absence of the magnetic fie... Using subdivision potential approach and mean-field theory for a ferromagnetic cluster, we obtained nanothermodynamic properties for a ferromagnetic nanocluster in the presence and also the absence of the magnetic field. The subdivision potential and the magnetic field both makes Gibbs and Helmholtz free energies of the ferromagnetic nanocluster stand at a lower level compared to those of the ferromagnetic cluster. Our main conclusion is that the presence of the magnetic field leads to decrease in the amount of specific heat capacity for the ferromagnetic cluster. On the other hand, this effect leads to increase in the amount of specific heat capacity for the ferromagnetic nanocluster. 展开更多
关键词 Subdivision Potential Mean-Field Theory FERROMAGNETIC NANOCLUSTER Nanothermodynamic
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Characteristics of a Silicon Wafer <111>and <004>after Planting Nitrogen
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作者 mehdi simiari Ramin Roozehdar Mogaddam 《Advances in Materials Physics and Chemistry》 2017年第5期173-187,共15页
In this paper, different steps of work and experiments that are done in order to implant nitrogen ion in silicon with the energy of 25 keV, density of 24 μA/cm2 and doses of 5 × 1013 atom/cm2, 1?× 1014 atom... In this paper, different steps of work and experiments that are done in order to implant nitrogen ion in silicon with the energy of 25 keV, density of 24 μA/cm2 and doses of 5 × 1013 atom/cm2, 1?× 1014 atom/cm2 and 1?× 1015 atom/ cm2 (according to the calculation and applying time at planting) at room temperature (in the lack of heat phase) and without annealing will be presented. The XRD analysis is done before and after planting to observe changes in the lattice and the possibility of forming a crystalline phase of silicon nitride in this case. Also, the study of changes in the lattice arrangement and AFM analysis is done to observe the topography of the surface. Besides, the investigation on surface roughness and changes caused by ion implantation on the surface and spectrophotometry analysis before and after planting due to the study of changes in optical properties are done. 展开更多
关键词 Silicon Wafer NITROGEN Ion IMPLANTATION XRD ANALYSIS AFM ANALYSIS SPECTROPHOTOMETRY ANALYSIS
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