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Silicon carbide resonant tuning fork for microsensing applications in high-temperature and high G-shock environments 被引量:6
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作者 David R Myers Kan Bun Cheng +6 位作者 Babak Jamshidi Robert G Azevedo Debbie G Senesky Li Chen mehran mehregany Muthu B J Wijesundara Albert P Pisano 《Engineering Sciences》 EI 2012年第5期36-41,共6页
We present the fabrication and testing of a silicon carbide (SiC) balanced mass doublended tuning fork that survives harsh environments without compromising the device strain sensitivity and resolution bandwidth. Th... We present the fabrication and testing of a silicon carbide (SiC) balanced mass doublended tuning fork that survives harsh environments without compromising the device strain sensitivity and resolution bandwidth. The device features a material stack that survives corrosive environments and enables high-temperature operation. To perform hightemperature testing, a specialized setup was constructed that allows the tuning fork to be characterized using traditional silicon electronics. The tuning fork has been operated at 600°C in the presence of dry steam for short durations. This tuning fork has also been tested to 64 000 G using a hard-launch, soft-catch shock implemented with a light gas gun. However, the device still has a strain sensitivity of 66 Hz/μe and strain resolution of 0. 045 μe in a 10 kHz bandwidth. As such, this balanced-mass double-ended tuning fork can be used to create a variety of different sensors including strain gauges, accelerometers, gyroscopes, and pressure transducers. Given the adaptable fabrication process flow, this device could be useful to micro-electro-mechanical systems (MEMS) designers creating sensors for a variety of different applications. 展开更多
关键词 MEMS SiC thermal effects double ended tuning fork (DETF) harsh environment high temperature high shock INERTIAL STRAIN sensors
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