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Complete coverage of reduced graphene oxide on silicon dioxide substrates
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作者 Huang Jingfeng melanie larisika +4 位作者 Chen Hu Steve Faulkner Myra A.Nimmo Christoph Nowak Alfred Tok Iing Yoong 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第8期143-146,共4页
Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (〈US$1) and portability ... Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (〈US$1) and portability (millimetre scale). However the large deviations in the electrical resistivity of this fabricated material prevent it from being used widely. After an ethanol chemical vapor deposition (CVD) post-treatment to graphene oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices. 展开更多
关键词 graphene oxide reduced graphene oxide graphene growth field effect transistor
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