A 256 Gb/s electronic−photonic monolithically integrated transceiver in 45 nm CMOS

With the explosive development of artificial intelligence(AI),machine learning(ML),and high-performance comput-ing(HPC),the ever-growing data movement is asking for high density interconnects with higher bandwidth(BW),lower power and lower latency[1−3].The optical I/O leverages silicon photonic(SiPh)technology to enable high-density large-scale integrated photonics.

Inhibiting plastic tensile instability of non-symmetric thin-walled shell component via increasing regional metal inflow based on heterogeneous pressure-carrying medium

Heterogeneous pressure-carrying medium was employed to establish a differentiated pressure field on sheet metal in flexible die forming process in this work,which aimed at matching the non-symmetric shape of target component and improving metal inflow to avoid local tensile instability.Specifically,metal inflow corresponding to the differentiated pressure field was analytically evaluated.Forming of a typical non-symmetric shell component was experimentally and numerically studied based on the proposed method.Compared with forming processes based on the uniform pressure,difference of metal inflow in two sides of the non-symmetric component increased from 2.16 mm to 3.36 mm and metal inflow in critical region increased by 11.9%when differentiated pressure field(taking heterogeneous elastomer#4–3 for example)was employed.The resultant maximum thinning ratio decreased by 4.2% and the uniformity of shell thickness increased by 16.9%.With the decrease of Shore hardness of elastomer in the formed region,stress path in the ready-to-form region transferred towards the bi-axial tension stress state,i.e.,stress ratio(a)increased.And,stress triaxiality(η)in characteristic regions were regulated appropriately,which decreased the risk of tensile instability.It was attributed to the decreased normal pressure and frictional resistance at sheet/elastomer interface in the formed region.

4×112 Gb/s hybrid integrated silicon receiver based on photonic-electronic co-design

A 4×112 Gb/s hybrid-integrated optical receiver is demonstrated based on the silicon-photonic vertical p-i-n photodetector and silicon–germanium transimpedance amplifier.We propose a photonic-electronic co-design technique to optimize both the device-level and system-level performance,based on the end-to-end equivalent circuit model of the receiver.Continuous-time linear equalization and shunt peaking are employed to enhance the frequency response.Experimental results reveal that the optical-to-electrical 3-dB bandwidth of the receiver is 48 GHz.Clear open NRZ eye diagrams at56 Gb/s and PAM-4 eye diagrams at 112 Gb/s are achieved without an equalizer in the oscilloscope.The measured bit error rates for 56 Gb/s in NRZ and 112 Gb/s in PAM-4 reach 1×10^(-12)and 2.4×10^(-4)(KP4-FEC:forward error correction)thresholds under-4 dBm input power,respectively.Furthermore,the proposed receiver boasts a power consumption of approximately2.2 pJ/bit,indicating an energy efficient solution for data center traffic growth.