A home-made low loss Bi/P co-doped silica fiber was fabricated using the modified chemical vapor deposition(MCVD)technique combined with the solution doping method,where the background loss at 1550 nm was as low as 17...A home-made low loss Bi/P co-doped silica fiber was fabricated using the modified chemical vapor deposition(MCVD)technique combined with the solution doping method,where the background loss at 1550 nm was as low as 17 dB/km.We demonstrated for the first time,to the best of our knowledge,an all-fiber amplifier using the home-made Bi/P co-doped fiber achieving broadband amplification in the E-band.The amplifying performance was evaluated and optimized with different pumping patterns and fiber length.A maximum net gain at 1355 nm close to 20 dB and a minimum noise figure of 4.6 dB were obtained for the first time,to the best of our knowledge,using two 1240 nm laser diodes under bidirectional pumping with the input pump and signal powers of 870 mW and−30 dBm,respectively.展开更多
In this Letter,the optical amplification characteristics of the home-made Bi/P co-doped silica fiber were systematically explored in the range of 1270–1360 nm.The maximum gain of 24.6 dB was obtained in the single-pa...In this Letter,the optical amplification characteristics of the home-made Bi/P co-doped silica fiber were systematically explored in the range of 1270–1360 nm.The maximum gain of 24.6 dB was obtained in the single-pass amplification device,and then improved to 38.3 dB in the double-pass amplification device for-30 dBm signal power.In addition,we simultaneously investigated the laser performance of the fiber with the linear cavity.A slope efficiency of 16.4%at~1313 nm was obtained with a maximum output power of about 133 mW under the input pump power of 869 mW at 1240 nm.As far as we know,it is the first laser reported based on the bismuth-doped fiber in China.展开更多
基金supported by the National Key R&D Program of China(No.2020YFB1805902).
文摘A home-made low loss Bi/P co-doped silica fiber was fabricated using the modified chemical vapor deposition(MCVD)technique combined with the solution doping method,where the background loss at 1550 nm was as low as 17 dB/km.We demonstrated for the first time,to the best of our knowledge,an all-fiber amplifier using the home-made Bi/P co-doped fiber achieving broadband amplification in the E-band.The amplifying performance was evaluated and optimized with different pumping patterns and fiber length.A maximum net gain at 1355 nm close to 20 dB and a minimum noise figure of 4.6 dB were obtained for the first time,to the best of our knowledge,using two 1240 nm laser diodes under bidirectional pumping with the input pump and signal powers of 870 mW and−30 dBm,respectively.
基金supported by the National Key R&D Program of China(No.2020YFB1805902)。
文摘In this Letter,the optical amplification characteristics of the home-made Bi/P co-doped silica fiber were systematically explored in the range of 1270–1360 nm.The maximum gain of 24.6 dB was obtained in the single-pass amplification device,and then improved to 38.3 dB in the double-pass amplification device for-30 dBm signal power.In addition,we simultaneously investigated the laser performance of the fiber with the linear cavity.A slope efficiency of 16.4%at~1313 nm was obtained with a maximum output power of about 133 mW under the input pump power of 869 mW at 1240 nm.As far as we know,it is the first laser reported based on the bismuth-doped fiber in China.
