InP film samples are prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which are atomized with compressed air as carrier gas onto glass substrates at 500° C with different thickn...InP film samples are prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which are atomized with compressed air as carrier gas onto glass substrates at 500° C with different thicknesses of the films. The structural properties of the samples are determined by x-ray diffraction （XRD）. It is found that the crystal structure of the InP films is polycrystalline hexagonal. The orientations of all the obtained films are along the c-axis perpendicular to the substrate. The electrical measurements of the samples are obtained by dc four-probe technique on rectangular-shape samples. The effects of temperature on the electrical properties of the InP films are studied in detail.展开更多
The thermoluminescence properties of CaF_(2):Tm (TLD-300) are examined in detail after β-irradiation at room temperature. The glow curve of the sample shows two main dosimetric glow peaks: P3 (at ~150℃) and P5 (at ~...The thermoluminescence properties of CaF_(2):Tm (TLD-300) are examined in detail after β-irradiation at room temperature. The glow curve of the sample shows two main dosimetric glow peaks: P3 (at ~150℃) and P5 (at ~250℃). The additive dose, variable heating rate, computer glow curve deconvolution, peak shape and three points methods are used to evaluate the trapping parameters, namely the order of kinetics (b), activation energy (E) and frequency factor (s) associated with the dosimetric thermoluminescent glow peaks (P3 and P5) of CaF_(2):Tm (TLD-300) after different dose levels with β-irradiation.展开更多
The effect of the annealing temperature Ta on the optical, electrical and structural properties of the In2S3 films obtained by the spray pyrolysis method at 350℃ substrate temperature was studied. All the In2S3 films...The effect of the annealing temperature Ta on the optical, electrical and structural properties of the In2S3 films obtained by the spray pyrolysis method at 350℃ substrate temperature was studied. All the In2S3 films annealed in the range from 100 to 400℃ are polycrystalline with (220) preferential orientation. The resistivity decreases as Ta increases until it reaches a value of 25 Ohm-cm for Ta=400℃. The grain size also increases when Ta increases as observed in data calculated from X-ray measurements. XRD data indicates that samples show microstructural perfection improvement as a function of annealing temperature.展开更多
文摘InP film samples are prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which are atomized with compressed air as carrier gas onto glass substrates at 500° C with different thicknesses of the films. The structural properties of the samples are determined by x-ray diffraction （XRD）. It is found that the crystal structure of the InP films is polycrystalline hexagonal. The orientations of all the obtained films are along the c-axis perpendicular to the substrate. The electrical measurements of the samples are obtained by dc four-probe technique on rectangular-shape samples. The effects of temperature on the electrical properties of the InP films are studied in detail.
文摘The thermoluminescence properties of CaF_(2):Tm (TLD-300) are examined in detail after β-irradiation at room temperature. The glow curve of the sample shows two main dosimetric glow peaks: P3 (at ~150℃) and P5 (at ~250℃). The additive dose, variable heating rate, computer glow curve deconvolution, peak shape and three points methods are used to evaluate the trapping parameters, namely the order of kinetics (b), activation energy (E) and frequency factor (s) associated with the dosimetric thermoluminescent glow peaks (P3 and P5) of CaF_(2):Tm (TLD-300) after different dose levels with β-irradiation.
文摘The effect of the annealing temperature Ta on the optical, electrical and structural properties of the In2S3 films obtained by the spray pyrolysis method at 350℃ substrate temperature was studied. All the In2S3 films annealed in the range from 100 to 400℃ are polycrystalline with (220) preferential orientation. The resistivity decreases as Ta increases until it reaches a value of 25 Ohm-cm for Ta=400℃. The grain size also increases when Ta increases as observed in data calculated from X-ray measurements. XRD data indicates that samples show microstructural perfection improvement as a function of annealing temperature.
