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Thermal Evaporation Deposition of Few-layer MoS_2 Films 被引量:3
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作者 Xiying Ma miaoyuan shi 《Nano-Micro Letters》 SCIE EI CAS 2013年第2期135-139,共5页
We present a study of the fabrication of monolayer MoS_2 on n-Si(111) substrates by modified thermal evaporation deposition and the optoelectrical properties of the resulting film. The as-grown MoS_2 ultrathin film is... We present a study of the fabrication of monolayer MoS_2 on n-Si(111) substrates by modified thermal evaporation deposition and the optoelectrical properties of the resulting film. The as-grown MoS_2 ultrathin film is about 10 nm thick, or about a few atomic layers of MoS_2. The film has a large optical absorption range of 300-700 nm and strong luminescence emission at 682 nm. The optical absorption range covered almost the entire ultraviolet to visible light range, which is very useful for making high-efficiency solar cells. Moreover, the MoS_2/Si heterojunction exhibited good rectification characteristics and excellent photovoltaic effects. The power conversion efficiency of the heterojunction device is about 1.79% under white light illumination of 10 m W/cm^2. The results show that the monolayer MoS_2 film will find many applications in high-efficiency optoelectronic devices. 展开更多
关键词 Monolayer MoS2 Thermal evaporation deposition Absorption spectrum I-V behavior
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