Activated carbons (ACs) were prepared from a lignocellulosic-based waste material by a chemical impregnation method using KOH, NaOH or CaCl2 as the activating agent. These ACs were characterized by different technique...Activated carbons (ACs) were prepared from a lignocellulosic-based waste material by a chemical impregnation method using KOH, NaOH or CaCl2 as the activating agent. These ACs were characterized by different techniques such as N2 adsorption, FTIR, XRD and SEM. Electrostatic properties viz. pH and pHpzc of AC suspensions in aqueous media were measured. The concentration of surface oxygenated functional groups of the ACs was estimated following the Boehm titration method. Cyclic voltammetry was conducted in H2SO4 after fabricating two-electrode capacitor cells of the ACs. The correlation of AC surface chemistry and morphology with electrochemical performance (capacitance) of powdered electrodes is analyzed and discussed.展开更多
Our goal is to develop a facile process to create patterns of inorganic oxides and metals on a substrate that can act as hard masks. These materials should have high etch contrast （compared to silicon） and so allow ...Our goal is to develop a facile process to create patterns of inorganic oxides and metals on a substrate that can act as hard masks. These materials should have high etch contrast （compared to silicon） and so allow high-aspect-ratio, high- fidelity pattern transfer whilst being readily integrable in modem semiconductor fabrication （FAB friendly）. Here, we show that ultra-small-dimension hard masks can be used to develop large areas of densely packed vertically and horizontally orientated Si nanowire arrays. The inorganic and metal hard masks （Ni, NiO, and ZnO） of different morphologies and dimensions were formed using microphase- separated polystyrene-b-poly（ethylene oxide） （PS-b-PEO） block copolymer （BCP） thin films by varying the BCP molecular weight, annealing temperature, and annealing solvent（s）. The self-assembled polymer patterns were solvent-processed, and metal ions were included into chosen domains via a selective inclusion method. Inorganic oxide nanopatterns were subsequently developed using standard techniques. High-resolution transmission electron microscopy studies show that high-aspect-ratio pattern transfer could be affected by standard plasma etch techniques. The masking ability of the different materials was compared in order to create the highest quality uniform and smooth sidewall profiles of the Si nanowire arrays. Notably good performance of the metal mask was seen, and this could impact the use of these materials at small dimensions where conventional methods are severely limited.展开更多
文摘Activated carbons (ACs) were prepared from a lignocellulosic-based waste material by a chemical impregnation method using KOH, NaOH or CaCl2 as the activating agent. These ACs were characterized by different techniques such as N2 adsorption, FTIR, XRD and SEM. Electrostatic properties viz. pH and pHpzc of AC suspensions in aqueous media were measured. The concentration of surface oxygenated functional groups of the ACs was estimated following the Boehm titration method. Cyclic voltammetry was conducted in H2SO4 after fabricating two-electrode capacitor cells of the ACs. The correlation of AC surface chemistry and morphology with electrochemical performance (capacitance) of powdered electrodes is analyzed and discussed.
基金We acknowledge financial support from the Science Foundation Ireland AMBER grant 12/RC/2278 and Semiconductor Research Corporation （SRC） grant 2013-OJ-2444. The contribution of the Foundation＇s Principal Investigator support is also acknowledged. We would also like to thank Dr. Clive Downing for the TEM assistance.
文摘Our goal is to develop a facile process to create patterns of inorganic oxides and metals on a substrate that can act as hard masks. These materials should have high etch contrast （compared to silicon） and so allow high-aspect-ratio, high- fidelity pattern transfer whilst being readily integrable in modem semiconductor fabrication （FAB friendly）. Here, we show that ultra-small-dimension hard masks can be used to develop large areas of densely packed vertically and horizontally orientated Si nanowire arrays. The inorganic and metal hard masks （Ni, NiO, and ZnO） of different morphologies and dimensions were formed using microphase- separated polystyrene-b-poly（ethylene oxide） （PS-b-PEO） block copolymer （BCP） thin films by varying the BCP molecular weight, annealing temperature, and annealing solvent（s）. The self-assembled polymer patterns were solvent-processed, and metal ions were included into chosen domains via a selective inclusion method. Inorganic oxide nanopatterns were subsequently developed using standard techniques. High-resolution transmission electron microscopy studies show that high-aspect-ratio pattern transfer could be affected by standard plasma etch techniques. The masking ability of the different materials was compared in order to create the highest quality uniform and smooth sidewall profiles of the Si nanowire arrays. Notably good performance of the metal mask was seen, and this could impact the use of these materials at small dimensions where conventional methods are severely limited.
