Colonoscopy-induced ischemic colitis in patients without risk factors

Ischemic colitis is the most common form of intestinal ischemia.It is a condition that is commonly seen in the elderly and among individuals with risk factors for ischemia.Common predisposing conditions for ischemic colitis are major vascular occlusion,small vessel disorder,shock,some medications,colonic obstructions and hematologic disorders.Ischemic colitis following colonoscopy is rare.Here,we report two cases of ischemic colitis after a routine screening colonoscopy in patients without risk factors for ischemia.

Estimation of plasma density perturbation from dusty plasma injection by laser irradiation on tungsten target in DiPS

To investigate the interaction of dusty plasma with magnetized plasmas at divertor plasma simulator,radial profiles of plasma density(ne)and electron temperature were measured in terms of plasma discharge currents and magnetic flux intensity by using a fast scanning probes system with triple tips.Dusty plasma with dusts(a generation rate of 3μg s-1 and a size of 1–10μm)was produced via interactions between a high-power laser beam and a full tungsten target.As ne increases,the scale of the effects of dusty plasma injection on magnetized plasmas was decreased.Also,the duration of transient fluctuation was reduced.For numerical estimation of plasma density perturbation due to dusty plasma injection,the result was 10%at a core region of the magnetized plasma with ne of(2–5)×10^11 cm^-3 at steady state condition.

Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays

The interface between oxide/oxide layers shows an inhomogeneous charge transport behavior,which reveals a high conductivity owing to interface-doped.One typical example is the hetero-interface between ZnO film and other wide band gap oxides(e.g.,Al_(2)O_(3),TiO_(2),and HfO_(2)).It is thus quite evident that the ZnO/other oxides hetero-interface contains high density electron carriers effectively screening the gate-induced electric field.Thus,an extremely weak gate modulation in ZnO film was showed,resulting in very low on/off ratio of 1.69 in top-gate field-effect-transistor(TG-FET)configuration.So,to extend the usage of ZnO TG-FET is not quite possible toward further practical application.Herein,we clarified the correlation of inhomogeneous region in oxide/oxide hetero-junction by systematically study.Our work suggests that a self-assembly of molecules(SAM)buffer layer is suitable for tuning the inhomogeneous charge transport in ZnO film,which not only reduces the interface trap density,but also effectively enhances the gate electric field modulation at the hetero-interface.We further report the robust fabrication of TG-FET arrays based on ZnO thin film,using an ultra-thin alkylphosphonic acid molecule monolayer as buffer layer.Our device demonstrates a pronounced ultrahigh on/off ratio of≥10^(8),which is 8-order of magnitude higher than that of a device without buffer layer.For the highly reliable arrays,our device exhibits a high yield of over 93%with an average on/off ratio of^10^(7) across the entire wafer scale,mobility(18.5 cm^(2)/(V·s)),an extended bias-stressing(~2,000 s)and long-stability(~150 days)under ambient conditions.