Aluminum nitride （AIN） nanowires, serrated nanoribbons, and nanoribbons were selectively obtained through a simple chloride assisted chemical vapor deposition process. The morphologies of the products could be contr...Aluminum nitride （AIN） nanowires, serrated nanoribbons, and nanoribbons were selectively obtained through a simple chloride assisted chemical vapor deposition process. The morphologies of the products could be controlled by adjusting the deposition position and the flux of the reactant gas. The morphologies and structures of the AIN products were investigated in detail. The formation mechanism of the as-prepared different morphologies of AIN one-dimensional （ID） nanostructures was discussed on the basis of the experimental results.展开更多
Vertically oriented nanowires(NWs)of single-crystalline wurtzite GaN have been fabricated on a-LiAlO_(2)(100)substrate coated with a Au layer,via a chemical vapor deposition process at 1000℃ using gallium and ammonia...Vertically oriented nanowires(NWs)of single-crystalline wurtzite GaN have been fabricated on a-LiAlO_(2)(100)substrate coated with a Au layer,via a chemical vapor deposition process at 1000℃ using gallium and ammonia as source materials.The GaN NWs grow along the nonpolar[10]direction with steeply tapering tips,and have triangular cross-sections with widths of 50100 nm and lengths of up to several microns.The GaN NWs are formed by a vapor liquid solid growth mechanism and the tapering tips are attributed to the temperature decrease in the final stage of the synthesis process.The aligned GaN NWs show blue-yellow emission originating from defect levels,residual impurities or surface states of the GaN NWs,and have potential applications in nanotechnology.展开更多
基金the National Natural Science Foundation of China under grant Nos.10674138 and 20571022.
文摘Aluminum nitride （AIN） nanowires, serrated nanoribbons, and nanoribbons were selectively obtained through a simple chloride assisted chemical vapor deposition process. The morphologies of the products could be controlled by adjusting the deposition position and the flux of the reactant gas. The morphologies and structures of the AIN products were investigated in detail. The formation mechanism of the as-prepared different morphologies of AIN one-dimensional （ID） nanostructures was discussed on the basis of the experimental results.
基金the National Natural Science Foundation of China(50525207 and 10374092)the National Basic Research Program of China(2007CB936601).
文摘Vertically oriented nanowires(NWs)of single-crystalline wurtzite GaN have been fabricated on a-LiAlO_(2)(100)substrate coated with a Au layer,via a chemical vapor deposition process at 1000℃ using gallium and ammonia as source materials.The GaN NWs grow along the nonpolar[10]direction with steeply tapering tips,and have triangular cross-sections with widths of 50100 nm and lengths of up to several microns.The GaN NWs are formed by a vapor liquid solid growth mechanism and the tapering tips are attributed to the temperature decrease in the final stage of the synthesis process.The aligned GaN NWs show blue-yellow emission originating from defect levels,residual impurities or surface states of the GaN NWs,and have potential applications in nanotechnology.
