[Objectives]The study aimed to evaluate the safety of Tongchui Baihua capsule.[Methods]Long-term toxicology experiment was adopted,the rats were randomly divided into control group and administration group according t...[Objectives]The study aimed to evaluate the safety of Tongchui Baihua capsule.[Methods]Long-term toxicology experiment was adopted,the rats were randomly divided into control group and administration group according to the gender of male and female;the drug administration group was given different doses of Tongchui Baihua capsules,and the drug was administered by continuous gavage for 13 weeks;the general conditions,haematological indexes,blood biochemical indexes and visceral coefficients of the rats were detected at the 13th week and 4 weeks after the drug withdrawal respectively,and the toxic symptoms were observed.[Results]The rats were given Tongchui Baihua capsule in different doses by gavage for 13 weeks,and no obvious toxicity was observed in weight,haematological indexes,blood biochemical indexes and histopathology.[Conclusions]Under the condition of long-term toxicity experiment,Tongchui Baihua capsule was safe for rats.展开更多
Because of profound applications of two-dimensional molybdenum disulfide(MoS_(2))and its heterostructures in electronics,its thermal stability has been spurred substantial interest.We employ a precision muffle furnace...Because of profound applications of two-dimensional molybdenum disulfide(MoS_(2))and its heterostructures in electronics,its thermal stability has been spurred substantial interest.We employ a precision muffle furnace at a series of increasing temperatures up to 340℃to study the oxidation behavior of continuous MoS_(2)films by either directly growing mono-and fewlayer MoS_(2)on SiO_(2)/Si substrate,or by mechanically transferring monolayer MoS_(2)or hexagonal boron nitride(h-BN)onto monolayer MoS_(2)substrate.Results show that monolayer MoS_(2)can withstand high temperature at 340℃with less oxidation while the few-layer MoS_(2)films are completely oxidized just at 280℃,resulting from the growth-induced tensile strain in few-layer MoS_(2).When the tensile strain of films is released by transfer method,the stacked few-layer MoS_(2)films exhibit superior thermal stability and typical layer-by-layer oxidation behavior at similarly high temperature.Counterintuitively,for the MoS_(2)/h-BN heterostructure,the h-BN film itself stacked on top is not damaged and forms many bubbles at 340℃,whereas the underlying monolayer MoS_(2)film is oxidized completely.By comprehensively using various experimental characterization and molecular dynamics calculations,such anomalous oxidation behavior of MoS_(2)/h-BN heterostructure is mainly due to the increased tensile strain in MoS_(2)film at elevated temperature.展开更多
文摘[Objectives]The study aimed to evaluate the safety of Tongchui Baihua capsule.[Methods]Long-term toxicology experiment was adopted,the rats were randomly divided into control group and administration group according to the gender of male and female;the drug administration group was given different doses of Tongchui Baihua capsules,and the drug was administered by continuous gavage for 13 weeks;the general conditions,haematological indexes,blood biochemical indexes and visceral coefficients of the rats were detected at the 13th week and 4 weeks after the drug withdrawal respectively,and the toxic symptoms were observed.[Results]The rats were given Tongchui Baihua capsule in different doses by gavage for 13 weeks,and no obvious toxicity was observed in weight,haematological indexes,blood biochemical indexes and histopathology.[Conclusions]Under the condition of long-term toxicity experiment,Tongchui Baihua capsule was safe for rats.
基金the National Natural Science Foundation of China(No.52005489)Ningbo 3315 Innovation Team(No.2020A-03-C)+1 种基金the China Postdoctoral Science Fund(Nos.2021T140685 and 2019M662126)the Natural Science Foundation of Zhejiang Province(No.LR20E050001).
文摘Because of profound applications of two-dimensional molybdenum disulfide(MoS_(2))and its heterostructures in electronics,its thermal stability has been spurred substantial interest.We employ a precision muffle furnace at a series of increasing temperatures up to 340℃to study the oxidation behavior of continuous MoS_(2)films by either directly growing mono-and fewlayer MoS_(2)on SiO_(2)/Si substrate,or by mechanically transferring monolayer MoS_(2)or hexagonal boron nitride(h-BN)onto monolayer MoS_(2)substrate.Results show that monolayer MoS_(2)can withstand high temperature at 340℃with less oxidation while the few-layer MoS_(2)films are completely oxidized just at 280℃,resulting from the growth-induced tensile strain in few-layer MoS_(2).When the tensile strain of films is released by transfer method,the stacked few-layer MoS_(2)films exhibit superior thermal stability and typical layer-by-layer oxidation behavior at similarly high temperature.Counterintuitively,for the MoS_(2)/h-BN heterostructure,the h-BN film itself stacked on top is not damaged and forms many bubbles at 340℃,whereas the underlying monolayer MoS_(2)film is oxidized completely.By comprehensively using various experimental characterization and molecular dynamics calculations,such anomalous oxidation behavior of MoS_(2)/h-BN heterostructure is mainly due to the increased tensile strain in MoS_(2)film at elevated temperature.