The synergism effect of total ionizing dose（TID） on a single event transient（SET） in a bipolar comparator is investigated. Experimental results show that the shapes of the SET are considerably influenced by the TI...The synergism effect of total ionizing dose（TID） on a single event transient（SET） in a bipolar comparator is investigated. Experimental results show that the shapes of the SET are considerably influenced by the TID accumulated in low dose rates. The variation tendency of SET shapes can be accurately simulated by temperature switching irradiation. The mechanism of this synergism effect is also analyzed in brief via the operating schematic of a comparator. After the accumulation of 100 krad（Si）, the lower tendency of negative SET can be attributed to the degeneration of . The change tendency of a positive SET, either lower or higher, is dependent on the load condition that limits the output range of the comparator.展开更多
We investigate the synergism effect of total ionizing dose(TID)on single-event burnout(SEB)for commercial enhancement-mode AlGaN/GaN high-electron mobility transistors.Our experimental results show that the slight deg...We investigate the synergism effect of total ionizing dose(TID)on single-event burnout(SEB)for commercial enhancement-mode AlGaN/GaN high-electron mobility transistors.Our experimental results show that the slight degradation of devices caused by gamma rays can affect the stability of the devices during the impact of high energy particles.During heavy ion irradiation,the safe working values of drain voltage are significantly reduced for devices which have already been irradiated by 60Co gamma rays before.This could be attributed to more charges trapped caused by 60Co gamma rays,which make GaN devices more vulnerable to SEB.Moreover,the electrical parameters of GaN devices after 60Co gamma and heavy-ion irradiations are presented,such as the output characteristic curve,effective threshold voltages,and leakage current of drain.These results demonstrate that the synergistic effect of TID on SEB for GaN power devices does in fact exist.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos U1532261 and U1630141
文摘The synergism effect of total ionizing dose（TID） on a single event transient（SET） in a bipolar comparator is investigated. Experimental results show that the shapes of the SET are considerably influenced by the TID accumulated in low dose rates. The variation tendency of SET shapes can be accurately simulated by temperature switching irradiation. The mechanism of this synergism effect is also analyzed in brief via the operating schematic of a comparator. After the accumulation of 100 krad（Si）, the lower tendency of negative SET can be attributed to the degeneration of . The change tendency of a positive SET, either lower or higher, is dependent on the load condition that limits the output range of the comparator.
基金Supported by the National Natural Science Foundation of China under Grant Nos. U1532261,U1630141,and 61534008the West Light Foundation of Chinese Academy of Sciences under Grant No. 2018-XBQNXZ-B-003
文摘We investigate the synergism effect of total ionizing dose(TID)on single-event burnout(SEB)for commercial enhancement-mode AlGaN/GaN high-electron mobility transistors.Our experimental results show that the slight degradation of devices caused by gamma rays can affect the stability of the devices during the impact of high energy particles.During heavy ion irradiation,the safe working values of drain voltage are significantly reduced for devices which have already been irradiated by 60Co gamma rays before.This could be attributed to more charges trapped caused by 60Co gamma rays,which make GaN devices more vulnerable to SEB.Moreover,the electrical parameters of GaN devices after 60Co gamma and heavy-ion irradiations are presented,such as the output characteristic curve,effective threshold voltages,and leakage current of drain.These results demonstrate that the synergistic effect of TID on SEB for GaN power devices does in fact exist.
