This paper presents a circuit model for thin avalanche photodiodes （APDs）. In this model, the nonuniformity of the electric filed in the multiplication region is modeled using a stepwise method. The model also tries...This paper presents a circuit model for thin avalanche photodiodes （APDs）. In this model, the nonuniformity of the electric filed in the multiplication region is modeled using a stepwise method. The model also tries to take the effects of carrier＇s position dependent properties, like carder＇s dead length and the history of carder＇s previous ionization into account by developing an effective electric field in the multiplication region. The output photocurrent and multiplication gain obtained from the proposed model for different lengths of the multi- plication region achieve a good agreement in comparison with available experimental data. In addition, calculated excess noise factor reveals the model ability for noise and sensitivity analysis.展开更多
文摘This paper presents a circuit model for thin avalanche photodiodes （APDs）. In this model, the nonuniformity of the electric filed in the multiplication region is modeled using a stepwise method. The model also tries to take the effects of carrier＇s position dependent properties, like carder＇s dead length and the history of carder＇s previous ionization into account by developing an effective electric field in the multiplication region. The output photocurrent and multiplication gain obtained from the proposed model for different lengths of the multi- plication region achieve a good agreement in comparison with available experimental data. In addition, calculated excess noise factor reveals the model ability for noise and sensitivity analysis.
