High-temperature characteristics of the metal/AlxGa1-xN/GaN M/S/S （M/S/S） diodes have been studied with current-voltage （I-V） and capacitance-voltage （C-V） measurements at high temperatures. Due to the presence ...High-temperature characteristics of the metal/AlxGa1-xN/GaN M/S/S （M/S/S） diodes have been studied with current-voltage （I-V） and capacitance-voltage （C-V） measurements at high temperatures. Due to the presence of the piezoelectric polarization field and a quantum well at the AlxGa1-xN/GaN interface, the AlxGal-xN/GaN diodes show properties distinctly different from those of the AlxGa1-xN diodes. For the AlxGa1-xN/GaN diodes, an increase in temperature accompanies an increase in barrier height and a decrease in ideality factor, while the AlxGa1-xN diodes are opposite. Furthermore, at room temperature, both reverse leakage current and reverse breakdown voltage are superior for the AlxGa1-xN/GaN diodes to those for the AlxGa1-xN diodes.展开更多
文摘High-temperature characteristics of the metal/AlxGa1-xN/GaN M/S/S （M/S/S） diodes have been studied with current-voltage （I-V） and capacitance-voltage （C-V） measurements at high temperatures. Due to the presence of the piezoelectric polarization field and a quantum well at the AlxGa1-xN/GaN interface, the AlxGal-xN/GaN diodes show properties distinctly different from those of the AlxGa1-xN diodes. For the AlxGa1-xN/GaN diodes, an increase in temperature accompanies an increase in barrier height and a decrease in ideality factor, while the AlxGa1-xN diodes are opposite. Furthermore, at room temperature, both reverse leakage current and reverse breakdown voltage are superior for the AlxGa1-xN/GaN diodes to those for the AlxGa1-xN diodes.
