In this study, separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) with double heterojunction AlN/AlxGa1-xN/GaN in multiplication region were designed to reduce excess noise usi...In this study, separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) with double heterojunction AlN/AlxGa1-xN/GaN in multiplication region were designed to reduce excess noise using Monte Carlo simulation. The multiplication region was broken to three different regions and tried to enhance localization of the first and second impact ionization events at near the heterojunctions. The excess noise of the proposed structure, for high gains, was 64% smaller than that of the fabricated standard AlGaN-APDs.展开更多
In this article, we calculated and modeled the gain of Ino.53Gao.47As/[nP avalanche photodiode （APD） based on a device mechanism and carrier rate equations using transfer matrix method （TMM）. In fact, a distribute...In this article, we calculated and modeled the gain of Ino.53Gao.47As/[nP avalanche photodiode （APD） based on a device mechanism and carrier rate equations using transfer matrix method （TMM）. In fact, a distributed model was presented for calculating impact ionization （I2） and relating different sections of the multiplication region. In this proposed model, recessive equations were used, and device gain is considered proportional to the number of output photo-electrons and photo-holes. By comparison of simulated results with experimental data available in literature, it has been demonstrated the capability of the developed model as a powerful tool for simulating APDs＇ behavior and interpreting their experimentally measured characteristics.展开更多
文摘In this study, separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode (APD) with double heterojunction AlN/AlxGa1-xN/GaN in multiplication region were designed to reduce excess noise using Monte Carlo simulation. The multiplication region was broken to three different regions and tried to enhance localization of the first and second impact ionization events at near the heterojunctions. The excess noise of the proposed structure, for high gains, was 64% smaller than that of the fabricated standard AlGaN-APDs.
文摘In this article, we calculated and modeled the gain of Ino.53Gao.47As/[nP avalanche photodiode （APD） based on a device mechanism and carrier rate equations using transfer matrix method （TMM）. In fact, a distributed model was presented for calculating impact ionization （I2） and relating different sections of the multiplication region. In this proposed model, recessive equations were used, and device gain is considered proportional to the number of output photo-electrons and photo-holes. By comparison of simulated results with experimental data available in literature, it has been demonstrated the capability of the developed model as a powerful tool for simulating APDs＇ behavior and interpreting their experimentally measured characteristics.
