In this work, nanostructured silicon dioxide films are deposited by closed-field unbalanced direct-current （DC） reactive magnetron sputterin technique on two sides of quartz cells containing rhodamine B dye dissolve...In this work, nanostructured silicon dioxide films are deposited by closed-field unbalanced direct-current （DC） reactive magnetron sputterin technique on two sides of quartz cells containing rhodamine B dye dissolved in ethanol with 10-5 M concentration as a random gain medium. The preparation conditions are optimized to prepare highly pure SiO2 nanostructures with a minimum particle size of about 20nm. The effect of SiO2 films as external cavity for the random gain medium is determined by the laser-induced fluorescence of this medium, and an increase of about 200% in intensity is observed after the deposition of nanostructured SiO2 thin films on two sides of the dye cell.展开更多
文摘In this work, nanostructured silicon dioxide films are deposited by closed-field unbalanced direct-current （DC） reactive magnetron sputterin technique on two sides of quartz cells containing rhodamine B dye dissolved in ethanol with 10-5 M concentration as a random gain medium. The preparation conditions are optimized to prepare highly pure SiO2 nanostructures with a minimum particle size of about 20nm. The effect of SiO2 films as external cavity for the random gain medium is determined by the laser-induced fluorescence of this medium, and an increase of about 200% in intensity is observed after the deposition of nanostructured SiO2 thin films on two sides of the dye cell.
