Layers of transparent and conductive Sn-doped zinc oxide (ZnO) have been prepared using chemical reactive liquid phase (spray) method on glass substrates. X-ray diffraction analysis shows that the obtained layers show...Layers of transparent and conductive Sn-doped zinc oxide (ZnO) have been prepared using chemical reactive liquid phase (spray) method on glass substrates. X-ray diffraction analysis shows that the obtained layers show preferential grains orientation along the direction (002). Microstructural analysis indicates that the thickness of the deposited films is independent of Sn content, i.e. 408 nm, and that the average grain size increases with increasing Sn content, ranging from 31 nm to 42 nm. The value of the optical gap obtained using UV-visible transmission spectroscopy method increases slightly from 3.1 eV to 3.3 eV. Moreover, transmission curves reveal that the prepared thin films are transparent in the visible domain.展开更多
Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 ℃.The effects of sodium thi...Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 ℃.The effects of sodium thiosulfate on the electrochemical deposition of ZnO were investigated by cyclic voltammetry and chronoamperometry techniques.Deposited films were obtained at-0.60 V vs.SCE and characterized by XRD,SEM,FTIR,optical,photoelectrochemical and electrical measurements.Thickness of the deposited film was measured to be357 nm.X-ray diffraction results indicated that the synthesized ZnO has a pure hexagonal wurtzite structure with a marked preferential orientation along（002） plane.FTIR results confirmed the presence of ZnO films at peak558 cm^-1.SEM images showed uniform,compact morphology without any cracks and films composed of large flower-like ZnO agglomerates with star-shape.Optical properties of ZnO reveal a high optical transmission（〉80%）and high absorption coefficient（α 〉 10^5 cm^-1） in visible region.The optical energy band gap was found to be 3.28 eV.Photoelectrochemical measurements indicated that the ZnO films had n-type semiconductor conduction.Electrical properties of ZnO films showed a low electrical resistivity of 6.54 Ω·cm,carrier concentration of-1.3× 10^17cm^-3 and mobility of 7.35 cm^2V^-1s^-1.展开更多
文摘Layers of transparent and conductive Sn-doped zinc oxide (ZnO) have been prepared using chemical reactive liquid phase (spray) method on glass substrates. X-ray diffraction analysis shows that the obtained layers show preferential grains orientation along the direction (002). Microstructural analysis indicates that the thickness of the deposited films is independent of Sn content, i.e. 408 nm, and that the average grain size increases with increasing Sn content, ranging from 31 nm to 42 nm. The value of the optical gap obtained using UV-visible transmission spectroscopy method increases slightly from 3.1 eV to 3.3 eV. Moreover, transmission curves reveal that the prepared thin films are transparent in the visible domain.
基金Project supported by the Algerian Ministry of Higher Education and Scientific Research,Algeria(No.J0101520090018)
文摘Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 ℃.The effects of sodium thiosulfate on the electrochemical deposition of ZnO were investigated by cyclic voltammetry and chronoamperometry techniques.Deposited films were obtained at-0.60 V vs.SCE and characterized by XRD,SEM,FTIR,optical,photoelectrochemical and electrical measurements.Thickness of the deposited film was measured to be357 nm.X-ray diffraction results indicated that the synthesized ZnO has a pure hexagonal wurtzite structure with a marked preferential orientation along（002） plane.FTIR results confirmed the presence of ZnO films at peak558 cm^-1.SEM images showed uniform,compact morphology without any cracks and films composed of large flower-like ZnO agglomerates with star-shape.Optical properties of ZnO reveal a high optical transmission（〉80%）and high absorption coefficient（α 〉 10^5 cm^-1） in visible region.The optical energy band gap was found to be 3.28 eV.Photoelectrochemical measurements indicated that the ZnO films had n-type semiconductor conduction.Electrical properties of ZnO films showed a low electrical resistivity of 6.54 Ω·cm,carrier concentration of-1.3× 10^17cm^-3 and mobility of 7.35 cm^2V^-1s^-1.
