We propose a novel silicon optical phase shifter structure based on heterogeneous strip-loaded waveguides on a photonic silicon on insulator(SOI) platform. The features of an etchless SOI layer and loaded strip would ...We propose a novel silicon optical phase shifter structure based on heterogeneous strip-loaded waveguides on a photonic silicon on insulator(SOI) platform. The features of an etchless SOI layer and loaded strip would enhance the performance and uniformity of silicon optical modulators on a large-scale wafer. We implemented the phase shifter by loading an amorphous silicon strip onto an SOI layer with a vertical PN diode structure. Compared to the conventional lateral PN phase shifter based on half-etched rib waveguides, this phase shifter shows a >1.5 times enhancement of modulation efficiency and provides >20 GHz high-speed operation.展开更多
文摘We propose a novel silicon optical phase shifter structure based on heterogeneous strip-loaded waveguides on a photonic silicon on insulator(SOI) platform. The features of an etchless SOI layer and loaded strip would enhance the performance and uniformity of silicon optical modulators on a large-scale wafer. We implemented the phase shifter by loading an amorphous silicon strip onto an SOI layer with a vertical PN diode structure. Compared to the conventional lateral PN phase shifter based on half-etched rib waveguides, this phase shifter shows a >1.5 times enhancement of modulation efficiency and provides >20 GHz high-speed operation.
