Indium sulfide （InzS3） thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 ~C. Thin films were characteri...Indium sulfide （InzS3） thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 ~C. Thin films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, energy disper- sive X-ray spectroscopy （EDS）, Raman spectroscopy and optical transmittance spectroscopy. All samples exhibit a polycrystalline structure with a preferential orientation along （0, 0, 12）. A good stoichiometry was attained for all samples. The morphology of thin film surfaces, as seen by SEM, was dense and no cracks or pinholes were ob- served. Raman spectroscopy analysis shows active modes belonging to j3-1naS3 phase. The optical transmittance in the visible range is higher than 60% and the band gap energy slightly increases with the sulfur to indium ratio, attaining a value of 2.63 eV for [S]/[In] ： 4.5.展开更多
Numerical simulation has been performed to improve the performance of Cu_(2)ZnSnS_(4)(CZTS)solar cells by replacing CdS with Zn_(1−x)Sn_(x)O buffer layer.The influences of thickness,donor concentration and defect dens...Numerical simulation has been performed to improve the performance of Cu_(2)ZnSnS_(4)(CZTS)solar cells by replacing CdS with Zn_(1−x)Sn_(x)O buffer layer.The influences of thickness,donor concentration and defect density of buffer layers on the performance of CZTS solar cells were investigated.It has been found that Zn_(1−x)Sn_(x)O buffer layer for Sn content of 0.20 is better for CZTS solar cell.A higher efficiency can be achieved with thinner buffer layer.The optimized solar cell demonstrated a maximum power conversion efficiency of 13%.展开更多
Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1 D. The Zn O: Al film shows a high efficiency than SnO_2:F. Moreover, the thinner window layer and lower defect densi...Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1 D. The Zn O: Al film shows a high efficiency than SnO_2:F. Moreover, the thinner window layer and lower defect density of Cd S films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field(BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.展开更多
基金supported by the Generalitat valenciana through grant PROMETEUS 2009/2011the European Commission through NanoCIS project (FP7-PEOPLE-2010IRSES ref. 269279)
文摘Indium sulfide （InzS3） thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 ~C. Thin films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, energy disper- sive X-ray spectroscopy （EDS）, Raman spectroscopy and optical transmittance spectroscopy. All samples exhibit a polycrystalline structure with a preferential orientation along （0, 0, 12）. A good stoichiometry was attained for all samples. The morphology of thin film surfaces, as seen by SEM, was dense and no cracks or pinholes were ob- served. Raman spectroscopy analysis shows active modes belonging to j3-1naS3 phase. The optical transmittance in the visible range is higher than 60% and the band gap energy slightly increases with the sulfur to indium ratio, attaining a value of 2.63 eV for [S]/[In] ： 4.5.
文摘Numerical simulation has been performed to improve the performance of Cu_(2)ZnSnS_(4)(CZTS)solar cells by replacing CdS with Zn_(1−x)Sn_(x)O buffer layer.The influences of thickness,donor concentration and defect density of buffer layers on the performance of CZTS solar cells were investigated.It has been found that Zn_(1−x)Sn_(x)O buffer layer for Sn content of 0.20 is better for CZTS solar cell.A higher efficiency can be achieved with thinner buffer layer.The optimized solar cell demonstrated a maximum power conversion efficiency of 13%.
文摘Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1 D. The Zn O: Al film shows a high efficiency than SnO_2:F. Moreover, the thinner window layer and lower defect density of Cd S films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field(BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.
