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Single-electron pumping in a ZnO single-nanobelt quantum dot transistor
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作者 Hassan Ali Jing Tang +9 位作者 Kai Peng SiBai Sun Attia Falak FeiLong Song ShiYao Wu ChenJiang Qian Meng Wang XiTian Zhang muhammad aftab rafiq XiuLai Xu 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2020年第6期97-104,共8页
Diluted magnetic semiconductors(DMSs)have traditionally been employed to implement spin-based quantum computing and quantum information processing.However,their low Curie temperature is a major hurdle in their use in ... Diluted magnetic semiconductors(DMSs)have traditionally been employed to implement spin-based quantum computing and quantum information processing.However,their low Curie temperature is a major hurdle in their use in this field,which creates the necessity for wide bandgap DMSs operating at room temperature.In view of this,a single-electron transistor(SET)with a global back-gate was built using a wide bandgap ZnO nanobelt(NB).Clear Coulomb oscillations were observed at 4.2 K.The periodicity of the Coulomb diamonds indicates that the Coulomb oscillations arise from single quantum dots of uniform size,whereas quasi-periodic Coulomb diamonds correspond to the contribution of multi-dots present in the ZnO NB.By applying an AC signal to the global back-gate across a Coulomb peak with varying frequencies,single-electron pumping was observed;the increase in current was equal to the production of electron charge and frequency.The current accuracy of about 1%for both single-and double-electron pumping was achieved at a high frequency of 25 MHz.This accurate single-electron pumping makes the ZnO NB SET suitable for single-spin injection and detection,which has great potential for applications in quantum information technology. 展开更多
关键词 ZnO nanobelt Coulomb blockade quantum dot transistor single-electron pumping
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