A field experiment was conducted at the G.B. Pant University Research Station, Ujhani (U.P.) in rainy (Kharif) season of the year 1994-1995 to study the effect of Rhizobium, VAM (vesicular arbuscular myc- orrhiza) and...A field experiment was conducted at the G.B. Pant University Research Station, Ujhani (U.P.) in rainy (Kharif) season of the year 1994-1995 to study the effect of Rhizobium, VAM (vesicular arbuscular myc- orrhiza) and PSB (phosphate solubilizing bacteria) inoculation, with and without P, on blackgram (Vigna mungo L.) seed yield. Phosphorus application in soil with medium P content (5.4 mg kg～1) increased nodu- lation, grain yield, N and P in plant and grain over no phosphorus control. Forty kilograms of P-2O-5 each hactare recorded an increase of 20.6 % in nodule dry weight, significant increases of 0.35 g kg～(-1) in N con- centration and 1.28 g kg～(-1) in P concentration of plant over 20 kg P-2O-5 ha～(-1). Similar significant increases of 0.59 g kg～(-l) in grain yield and 0.54 and 0.23 g kg～(-1) in N and P concentrations of the grain, respectively, over 20 kg P-2O-5 ha～(-1) were also obtained with higher dose. Inoculation of Rhizobium ＋ VAM ＋ PSB at all the stages of plant growth recorded maximum increases in all the parameters studied. Dual inoculation of Rhizobium with either VAM or PSB was generally significant in the effect and better than that of VAM ＋ PSB, however, P accumulation in plant and grain was more with VAM ＋ PSB. Among single inocula tions, Rhizobium gave highest and 21.0 % more nodule number, 34.7 % more nodule dry mass, 0.73 g kg～(-1) more N in grain and 4.2 % higher grain yield over PSB. PSB, however, registered significant increases in P concentration in plant and grain over VAM and Rhizobium.展开更多
基金Project supported by the G. B. Pant Univ. of Agri. and Tech., Pantnagar, India.
文摘A field experiment was conducted at the G.B. Pant University Research Station, Ujhani (U.P.) in rainy (Kharif) season of the year 1994-1995 to study the effect of Rhizobium, VAM (vesicular arbuscular myc- orrhiza) and PSB (phosphate solubilizing bacteria) inoculation, with and without P, on blackgram (Vigna mungo L.) seed yield. Phosphorus application in soil with medium P content (5.4 mg kg～1) increased nodu- lation, grain yield, N and P in plant and grain over no phosphorus control. Forty kilograms of P-2O-5 each hactare recorded an increase of 20.6 % in nodule dry weight, significant increases of 0.35 g kg～(-1) in N con- centration and 1.28 g kg～(-1) in P concentration of plant over 20 kg P-2O-5 ha～(-1). Similar significant increases of 0.59 g kg～(-l) in grain yield and 0.54 and 0.23 g kg～(-1) in N and P concentrations of the grain, respectively, over 20 kg P-2O-5 ha～(-1) were also obtained with higher dose. Inoculation of Rhizobium ＋ VAM ＋ PSB at all the stages of plant growth recorded maximum increases in all the parameters studied. Dual inoculation of Rhizobium with either VAM or PSB was generally significant in the effect and better than that of VAM ＋ PSB, however, P accumulation in plant and grain was more with VAM ＋ PSB. Among single inocula tions, Rhizobium gave highest and 21.0 % more nodule number, 34.7 % more nodule dry mass, 0.73 g kg～(-1) more N in grain and 4.2 % higher grain yield over PSB. PSB, however, registered significant increases in P concentration in plant and grain over VAM and Rhizobium.
文摘随着金属导线线宽的不断缩小,在90nm 技术以下,刻蚀残留物的存在会在应力迁移测试中形成高通孔电阻和空洞成核现象。物理氩离子预清洗是一种去除残留物的有效方法。但在应力迁移测试中发现,底部沟槽铜的二次溅射会导致器件的早期失效。反应性预清洗方法由于含有H +、H 类粒子而在减少C uO x 和清洗Si,N ,F,C ,O ,等蚀刻残留物时表现出其优越性。提出了针对传统PV D 工艺的反应性预清洗及PV D 击穿(沉积,刻蚀,沉积)工艺的解决方案。阻挡层击穿工艺减少了通孔电阻,提高了应力迁移性能,并通过薄钽沉积工序防止了铜的扩散从而保护了双嵌入斜面和错位通孔。此外,使电子阻塞和局部加热效应最小化的U 型界面,提高了电子迁移失效的平均时间,一致的、可重复的覆盖膜特性和良好的电参量测试结果已经证实了这种工艺的生产价值。
