We present a study of capping-barrier layer （CBL） effect on electro-optical properties of box- and spherical-shaped quantum dots as well as of the electronic transport of a QDs-array It is shown that increasing the ...We present a study of capping-barrier layer （CBL） effect on electro-optical properties of box- and spherical-shaped quantum dots as well as of the electronic transport of a QDs-array It is shown that increasing the CBL-width leads to a considerable enhancement in third-order optical nonlinear susceptibilities （14 times in the quadratic electro-optic effect, 31 times for ω = ω0/3 and 14 times for ω = ω0 in the third harmonic generation）. The capping-barrier layer thus can be employed as a degree of freedom in engineering the electro-optical specifications of quantum-dot-based devices.展开更多
文摘We present a study of capping-barrier layer （CBL） effect on electro-optical properties of box- and spherical-shaped quantum dots as well as of the electronic transport of a QDs-array It is shown that increasing the CBL-width leads to a considerable enhancement in third-order optical nonlinear susceptibilities （14 times in the quadratic electro-optic effect, 31 times for ω = ω0/3 and 14 times for ω = ω0 in the third harmonic generation）. The capping-barrier layer thus can be employed as a degree of freedom in engineering the electro-optical specifications of quantum-dot-based devices.
