Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped GaSb grown by the liquid encapsuled Czochralski technique are carried out as functions of temperature （35-350 K） and magnetic field （0...Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped GaSb grown by the liquid encapsuled Czochralski technique are carried out as functions of temperature （35-350 K） and magnetic field （0-1.35 T）. The power law model is used to explain the temperature-dependent resistivity. The magnetic-field-dependent data are analysed using the quantitative mobility spectrum analysis technique. The effect of individual band parameters （nL, nr, μL, μr, p and μp） on both the electron and magneto transports have been discussed. The EL - Er energy separation between the L and conduction band edges is also derived.展开更多
文摘Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped GaSb grown by the liquid encapsuled Czochralski technique are carried out as functions of temperature （35-350 K） and magnetic field （0-1.35 T）. The power law model is used to explain the temperature-dependent resistivity. The magnetic-field-dependent data are analysed using the quantitative mobility spectrum analysis technique. The effect of individual band parameters （nL, nr, μL, μr, p and μp） on both the electron and magneto transports have been discussed. The EL - Er energy separation between the L and conduction band edges is also derived.
