The good quality of 200 pairs of highly strained In_(0.24)GaAs/GaAs multi-quantum-well(MQW)structure is demonstrated by the x-ray diffraction and photoluminescence curves.Large-area modulators based on the pseudomorph...The good quality of 200 pairs of highly strained In_(0.24)GaAs/GaAs multi-quantum-well(MQW)structure is demonstrated by the x-ray diffraction and photoluminescence curves.Large-area modulators based on the pseudomorphic In_(0.24)GaAs/GaAs MQW are designed and fabricated successfully,where the diameters are not less than 3 mm and the working wavelength is extended to 1064 nm.The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V.展开更多
We report the coherent resonant emission of the exciton state in a single InAs quantum dot,embedded in a planar optical microcavity.The quantum dot is excited by a laser beam from the cleaved sample edge,and the reson...We report the coherent resonant emission of the exciton state in a single InAs quantum dot,embedded in a planar optical microcavity.The quantum dot is excited by a laser beam from the cleaved sample edge,and the resonant fluorescence is collected in the direction perpendicular to the excitation laser beam,so the residual laser scattering can be deeply suppressed.This experimental setup enables us to observe Rabi oscillation and a Mollow triplet with Rabi energy up to about 27μeV.展开更多
Tunable metamorphic InGaAs partially depleted absorber photodiodes with resonant cavity enhanced structure are fabricated on GaAs substrate.Dark-current densities of 7.2×10^(-7)A/cm^(2) at 0 V and 3.6×10^(-4...Tunable metamorphic InGaAs partially depleted absorber photodiodes with resonant cavity enhanced structure are fabricated on GaAs substrate.Dark-current densities of 7.2×10^(-7)A/cm^(2) at 0 V and 3.6×10^(-4)A/cm^(2) at-5 V,a high quantum efficiency of 74.4%at 1546nm,and a 3-dB bandwidth up to 12GHz are achieved.The full width at half maximum of the detector is about 16nm.Furthermore,through thermal tuning,the peak wavelength red shifts from 1527nm to 1544 nm,and a tuning range of 17nm is realized without fabricating extra tuning electrodes.展开更多
We report the fabrication of intermediate-band solar cells(IBSCs)based on quantum dots(QDs),which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer.Compared with conventiona...We report the fabrication of intermediate-band solar cells(IBSCs)based on quantum dots(QDs),which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer.Compared with conventional GaAs single-junction solar cells,the IBSCs based on InAs/GaAs QDs show a broader photo-response spectrum(>1330 nm),a higher short-circle current(about 53%increase)and a stronger radiation hardness.The results have important applications for realizing high efficiency solar cells with stronger radiation hardness.展开更多
According to the theory of optical films,we simulate the reflectivity of antireflection coatings(ARCS)for solar cells of Gao.51no.5P/GaAs/Ge based on an optical transfer matrix.In order to provide sufficient considera...According to the theory of optical films,we simulate the reflectivity of antireflection coatings(ARCS)for solar cells of Gao.51no.5P/GaAs/Ge based on an optical transfer matrix.In order to provide sufficient consideration of the refractive index dispersion effect of multilayer ARCS,we use multi-dimensional matrix data for reliable simulation.After the reflection curves are obtained,the effective average reflectance Re is introduced to optimize the film system by minimizing Re.Optimization of single layer(A1_(2)0_(3)),double layer(MgF_(2)/ZnS)and triple layer(MgF_(2)/A1_(2)0_(3)/ZnS)ARCS is realized by using this method for space and terrestrial applications.Effects of these ARCS are compared after optimization.These theoretical parameters can be used to guide experiments.展开更多
基金Advanced Research Foundation of China(914xxx803-051xxx111)National Defense Advanced Research project(315xxxxx301)National Defense Innovation Program(48xx4).
基金Supported by National Natural Science Foundation of China (617905 80,61790581,61790582,61435012)the National Key Technologies R&D Program of China (2018YFA0306101)+1 种基金the Key R&D Program of Guangdong Province (2018R030329001)the Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20170032)
文摘通过MBE外延系统生长了1.3µm的GaAs基InAs量子点激光器.为了获得更好的器件性能,InAs量子点的最优生长温度被标定为520℃,并且在有源区中引入Be掺杂.制备了脊宽100µm,腔长2 mm的激光器单管器件,在未镀膜的情况下,达到了峰值功率1.008 W的室温连续工作,阈值电流密度为110 A/cm^-2,在80℃下仍然可以实现连续工作,在50℃以下范围内,特征温度达到405 K.
基金the National Natural Science Foundation of China under Grant Nos 61274069,61176053 and 61021003the National High-Technology Research and Development Program of China under Grant No 2012AA012202the National Basic Research Program of China under Grant Nos 2012CB933503 and 2013CB932904.
文摘The good quality of 200 pairs of highly strained In_(0.24)GaAs/GaAs multi-quantum-well(MQW)structure is demonstrated by the x-ray diffraction and photoluminescence curves.Large-area modulators based on the pseudomorphic In_(0.24)GaAs/GaAs MQW are designed and fabricated successfully,where the diameters are not less than 3 mm and the working wavelength is extended to 1064 nm.The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V.
基金Supported by the National Natural Science Foundation of China under Grant Nos 90921015,11074246.
文摘We report the coherent resonant emission of the exciton state in a single InAs quantum dot,embedded in a planar optical microcavity.The quantum dot is excited by a laser beam from the cleaved sample edge,and the resonant fluorescence is collected in the direction perpendicular to the excitation laser beam,so the residual laser scattering can be deeply suppressed.This experimental setup enables us to observe Rabi oscillation and a Mollow triplet with Rabi energy up to about 27μeV.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60876039 and 61176053the Hi-Tech Research and Development Program of China(863 Program)under Grant No 2009AA03Z404the National Basic Research Program of China(973 Program)under Grant No 2010CB327601.
文摘Tunable metamorphic InGaAs partially depleted absorber photodiodes with resonant cavity enhanced structure are fabricated on GaAs substrate.Dark-current densities of 7.2×10^(-7)A/cm^(2) at 0 V and 3.6×10^(-4)A/cm^(2) at-5 V,a high quantum efficiency of 74.4%at 1546nm,and a 3-dB bandwidth up to 12GHz are achieved.The full width at half maximum of the detector is about 16nm.Furthermore,through thermal tuning,the peak wavelength red shifts from 1527nm to 1544 nm,and a tuning range of 17nm is realized without fabricating extra tuning electrodes.
基金Supported by the One-Hundred Talents Program of Chinese Academy of Sciences,and the National Science Foundation of China under Grant Nos 60876033,61076050 and 61021003.
文摘We report the fabrication of intermediate-band solar cells(IBSCs)based on quantum dots(QDs),which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer.Compared with conventional GaAs single-junction solar cells,the IBSCs based on InAs/GaAs QDs show a broader photo-response spectrum(>1330 nm),a higher short-circle current(about 53%increase)and a stronger radiation hardness.The results have important applications for realizing high efficiency solar cells with stronger radiation hardness.
基金Supported by the National Natural Science Foundation of China under Grant No 60625405the National Basic Research Program of China under Grant Nos 2007CB936304 and 2010CB327601the China Postdoctoral Science Foundation under Grant No 20080440507.
文摘According to the theory of optical films,we simulate the reflectivity of antireflection coatings(ARCS)for solar cells of Gao.51no.5P/GaAs/Ge based on an optical transfer matrix.In order to provide sufficient consideration of the refractive index dispersion effect of multilayer ARCS,we use multi-dimensional matrix data for reliable simulation.After the reflection curves are obtained,the effective average reflectance Re is introduced to optimize the film system by minimizing Re.Optimization of single layer(A1_(2)0_(3)),double layer(MgF_(2)/ZnS)and triple layer(MgF_(2)/A1_(2)0_(3)/ZnS)ARCS is realized by using this method for space and terrestrial applications.Effects of these ARCS are compared after optimization.These theoretical parameters can be used to guide experiments.
