Aminiaturized near infrared single photon detector is demonstrated by integrating a thermoelectric cooler(TEC),a thermistor,and a planar type In Ga As/In P separate absorption,charge and multiplication structure singl...Aminiaturized near infrared single photon detector is demonstrated by integrating a thermoelectric cooler(TEC),a thermistor,and a planar type In Ga As/In P separate absorption,charge and multiplication structure single photon avalanche diode into a butterfly case.The performance of the device at different temperatures is tested.It can achieve 20.3% single photon detection efficiency and 1.38 k Hz dark count rate when the chip is cooled to 223 K.The test results show that even when the chip temperature is kept constant,the dark count rate of the device still increases with the increase of ambient temperature,which is consistent with the carrier generation mechanism of semiconductor materials.The mechanism is researched and it is found that thermal radiation of the high temperature case is the main source of dark count.The deep research on the mechanism is beneficial to developing higher performance devices in the future.展开更多
A low noise InGaAs/InP single photon avalanche diode(SPAD) is demonstrated. The device is based on planar type separate absorption, grading, charge and multiplication structure. Relying on reasonably designed device s...A low noise InGaAs/InP single photon avalanche diode(SPAD) is demonstrated. The device is based on planar type separate absorption, grading, charge and multiplication structure. Relying on reasonably designed device structure and low-damage Zn diffusion technology, excellent low-noise performance is achieved. Due to its importance, the physical mechanism of dark count is analyzed through performance characterization at different temperatures. The device can achieve 20% single photon detection efficiency and 320 Hz dark count rate(DCR) with a low after pulsing probability of 0.57% at 233 K.展开更多
基金supported by the National Key R&D Plan Research Program (No.2021YFB2206400)。
文摘Aminiaturized near infrared single photon detector is demonstrated by integrating a thermoelectric cooler(TEC),a thermistor,and a planar type In Ga As/In P separate absorption,charge and multiplication structure single photon avalanche diode into a butterfly case.The performance of the device at different temperatures is tested.It can achieve 20.3% single photon detection efficiency and 1.38 k Hz dark count rate when the chip is cooled to 223 K.The test results show that even when the chip temperature is kept constant,the dark count rate of the device still increases with the increase of ambient temperature,which is consistent with the carrier generation mechanism of semiconductor materials.The mechanism is researched and it is found that thermal radiation of the high temperature case is the main source of dark count.The deep research on the mechanism is beneficial to developing higher performance devices in the future.
基金supported by the Major Scientific and Technological Innovation Projects in Hubei Province (No.2017AAA047)。
文摘A low noise InGaAs/InP single photon avalanche diode(SPAD) is demonstrated. The device is based on planar type separate absorption, grading, charge and multiplication structure. Relying on reasonably designed device structure and low-damage Zn diffusion technology, excellent low-noise performance is achieved. Due to its importance, the physical mechanism of dark count is analyzed through performance characterization at different temperatures. The device can achieve 20% single photon detection efficiency and 320 Hz dark count rate(DCR) with a low after pulsing probability of 0.57% at 233 K.
