Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitanc...Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitance-voltage(C-V)characteristics.Such an algorithm treats the device as a parallel-plane junction and ignores the influence of the terminations.The epitaxy layer doping concentration tends to be overestimated and the thickness underestimated.In order to obtain the epitaxy layer parameters with higher accuracy,a new algorithm applicable for devices with field limited ring(FLR)terminations is proposed in this paper.This new algorithm is also based on the C-V characteristics and considers the extension manner of the depletion region under the FLR termination.Such an extension manner depends on the design parameters of the FLR termination and is studied in detail by simulation and modeling.The analytical expressions of the device C-V characteristics and the effective doping profile are derived.More accurate epitaxy layer parameters can be extracted by fitting the effective doping profile expression to the C-V doping profile calculated from the C-V characteristics.The relationship between the horizontal extension width and the vertical depth of the depletion region is also acquired.The credibility of the new algorithm is verified by experiments.The applicability of our new algorithm to FLR/field plate combining terminations is also discussed.Our new algorithm acts as a powerful tool for analyses and improvements of power devices.展开更多
High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate...High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate oxide thickness and gate voltage,the high-k dielectric enables a greater charge accumulation in the channel region,resulting in a larger number of free electrons available for conduction.However,the lower energy band gap of high-k materials leads to significant leakage currents at the interface with Si C,which greatly affects device reliability.By inserting a layer of SiO_(2)between the high-k material and Si C,the interfacial barrier can be effectively widened and hence the leakage current will be reduced.In this study,the optimal thickness of the intercalated SiO_(2)was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al_(2)O_(3)layer and thermally nitride SiO_(2).Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al_(2)O_(3)stacked on 1 nm,2 nm,3 nm,6 nm,or 9 nm thick nitride SiO_(2).Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field.Finally,a saturation thickness of stacked SiO_(2)that contributed to dielectric breakdown and interfacial band offsets was identified.The findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.展开更多
Sn3O4, a common two-dimensional semiconductor photocatalyst, can absorb visible light.However, owing to its rapid recombination of photogenerated electron-hole pairs, its absorption is not sufficient for practical app...Sn3O4, a common two-dimensional semiconductor photocatalyst, can absorb visible light.However, owing to its rapid recombination of photogenerated electron-hole pairs, its absorption is not sufficient for practical application.In this work, a Sn nanoparticle/Sn3O4-x nanosheet heterostructure was prepared by in situ reduction of Sn3O4 under a H2 atmosphere.The Schottky junctions formed between Sn and Sn3O4-x can enhance the photogenerated carrier separation ability.During the hydrogenation process, a portion of the oxygen in the semiconductor can be extracted by hydrogen to form water, resulting in an increase in oxygen vacancies in the semiconductor.The heterostructure showed the ability to remove Rhodamine B.Cell cytocompatibility experiments proved that Sn/Sn3O4-x can significantly enhance cell compatibility and reduce harm to organisms.This work provides a new method for the fabrication of a Schottky junction composite photocatalyst rich in oxygen vacancies with enhanced photocatalytic performance.展开更多
Objective Patients with H1N1 virus infection were hospitalized and quarantined, and some of them developed into acute respiratory failure, and were transfered to the medical intensive care unit of Beijing Ditan Hospit...Objective Patients with H1N1 virus infection were hospitalized and quarantined, and some of them developed into acute respiratory failure, and were transfered to the medical intensive care unit of Beijing Ditan Hospital, Capital Medical University in Beijing, China. Methods The clinical features and preliminary epidemiologic findings among 30 patients with confirmed H1N1 virus infection who developed into acute respiratory failure for ventilatory support were investigated. Results A total of 30 patients(37.43 ± 18.80 years old) with 2009 influenza A(H1N1) related acute respiratory distress syndrome(ARDS) received treatment with mechanical ventilation, 15 cases of whom were male and 17 cases died of ARDS. Fatal cases were significantly associated with an APACHE Ⅱ score(P = 0.016), but not with PaO 2 /FIO 2(P = 0.912) and chest radiograph(P = 0.333). The most common complication was acute renal failure(n = 9). Five patients received extracorporeal membrane oxygenation(ECMO), 3 of whom died and the others survived. The major causes of death were multiple organ dysfunction syndrome(MODS)(39%), intractable respiratory failure(27%) and sepsis(20%). Conclusions Most patients with respiratory failure due to influenza A(H1N1) virus infection were young, with a high mortality, particularly associated with APACHE Ⅱ score, secondary infection of lung or type 2 diabetes mellitus.展开更多
Antibiotic misuse has resulted in the emergence of superbugs,warranting new antibacterial methods.Surface amorphisation oxygen vacancy-rich porous Sn_(3)O_(x)nanosheets in situ grown on Ni foam are successfully design...Antibiotic misuse has resulted in the emergence of superbugs,warranting new antibacterial methods.Surface amorphisation oxygen vacancy-rich porous Sn_(3)O_(x)nanosheets in situ grown on Ni foam are successfully designed via a simple,one-step hydrothermal method,resulting in enhanced photoelectrochemical(PEC)bacterial inactivation.In this system,the porous structure enriches its surface with oxygen vacancies,which can extend the absorption spectrum into the near-infrared region,while oxygen vacancies can enhance the separation of electronhole pairs.Most importantly,the sheet-like porous structure enhances surface active sites and increase the contact area between bacteria and electrodes.Therefore,the reactive oxygen species produced during the PEC process can directly act on the surface of bacteria and is100%effectively against drug-resistant Gram-positive and Gram-negative bacteria in water within 30 min.This study acts as a foundation for the development of novel photoelectrocatalyst electrodes for efficient water purification.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2018YFB0104701)。
文摘Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitance-voltage(C-V)characteristics.Such an algorithm treats the device as a parallel-plane junction and ignores the influence of the terminations.The epitaxy layer doping concentration tends to be overestimated and the thickness underestimated.In order to obtain the epitaxy layer parameters with higher accuracy,a new algorithm applicable for devices with field limited ring(FLR)terminations is proposed in this paper.This new algorithm is also based on the C-V characteristics and considers the extension manner of the depletion region under the FLR termination.Such an extension manner depends on the design parameters of the FLR termination and is studied in detail by simulation and modeling.The analytical expressions of the device C-V characteristics and the effective doping profile are derived.More accurate epitaxy layer parameters can be extracted by fitting the effective doping profile expression to the C-V doping profile calculated from the C-V characteristics.The relationship between the horizontal extension width and the vertical depth of the depletion region is also acquired.The credibility of the new algorithm is verified by experiments.The applicability of our new algorithm to FLR/field plate combining terminations is also discussed.Our new algorithm acts as a powerful tool for analyses and improvements of power devices.
基金Project supported by the Key Area Research and Development Program of Guangdong Province of China(Grant No.2021B0101300005)the National Key Research and Development Program of China(Grant No.2021YFB3401603)。
文摘High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate oxide thickness and gate voltage,the high-k dielectric enables a greater charge accumulation in the channel region,resulting in a larger number of free electrons available for conduction.However,the lower energy band gap of high-k materials leads to significant leakage currents at the interface with Si C,which greatly affects device reliability.By inserting a layer of SiO_(2)between the high-k material and Si C,the interfacial barrier can be effectively widened and hence the leakage current will be reduced.In this study,the optimal thickness of the intercalated SiO_(2)was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al_(2)O_(3)layer and thermally nitride SiO_(2).Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al_(2)O_(3)stacked on 1 nm,2 nm,3 nm,6 nm,or 9 nm thick nitride SiO_(2).Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field.Finally,a saturation thickness of stacked SiO_(2)that contributed to dielectric breakdown and interfacial band offsets was identified.The findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.
基金financially supported by the National Natural Science Foundation of China (Nos.51802115 and 51732007)the Natural Science Foundation of Shandong Province, China (No.ZR2019YQ21)。
文摘Sn3O4, a common two-dimensional semiconductor photocatalyst, can absorb visible light.However, owing to its rapid recombination of photogenerated electron-hole pairs, its absorption is not sufficient for practical application.In this work, a Sn nanoparticle/Sn3O4-x nanosheet heterostructure was prepared by in situ reduction of Sn3O4 under a H2 atmosphere.The Schottky junctions formed between Sn and Sn3O4-x can enhance the photogenerated carrier separation ability.During the hydrogenation process, a portion of the oxygen in the semiconductor can be extracted by hydrogen to form water, resulting in an increase in oxygen vacancies in the semiconductor.The heterostructure showed the ability to remove Rhodamine B.Cell cytocompatibility experiments proved that Sn/Sn3O4-x can significantly enhance cell compatibility and reduce harm to organisms.This work provides a new method for the fabrication of a Schottky junction composite photocatalyst rich in oxygen vacancies with enhanced photocatalytic performance.
基金supported by grant from the National Natural Science Foundation of China(No.30600524)Beijing Municipal Science and Technology Project D09050703560908
文摘Objective Patients with H1N1 virus infection were hospitalized and quarantined, and some of them developed into acute respiratory failure, and were transfered to the medical intensive care unit of Beijing Ditan Hospital, Capital Medical University in Beijing, China. Methods The clinical features and preliminary epidemiologic findings among 30 patients with confirmed H1N1 virus infection who developed into acute respiratory failure for ventilatory support were investigated. Results A total of 30 patients(37.43 ± 18.80 years old) with 2009 influenza A(H1N1) related acute respiratory distress syndrome(ARDS) received treatment with mechanical ventilation, 15 cases of whom were male and 17 cases died of ARDS. Fatal cases were significantly associated with an APACHE Ⅱ score(P = 0.016), but not with PaO 2 /FIO 2(P = 0.912) and chest radiograph(P = 0.333). The most common complication was acute renal failure(n = 9). Five patients received extracorporeal membrane oxygenation(ECMO), 3 of whom died and the others survived. The major causes of death were multiple organ dysfunction syndrome(MODS)(39%), intractable respiratory failure(27%) and sepsis(20%). Conclusions Most patients with respiratory failure due to influenza A(H1N1) virus infection were young, with a high mortality, particularly associated with APACHE Ⅱ score, secondary infection of lung or type 2 diabetes mellitus.
基金financially supported by the National Natural Science Foundation of China(Nos.51732007,52272212)the Natural Science Foundation of Shandong Province(No.ZR2022JQ20)。
文摘Antibiotic misuse has resulted in the emergence of superbugs,warranting new antibacterial methods.Surface amorphisation oxygen vacancy-rich porous Sn_(3)O_(x)nanosheets in situ grown on Ni foam are successfully designed via a simple,one-step hydrothermal method,resulting in enhanced photoelectrochemical(PEC)bacterial inactivation.In this system,the porous structure enriches its surface with oxygen vacancies,which can extend the absorption spectrum into the near-infrared region,while oxygen vacancies can enhance the separation of electronhole pairs.Most importantly,the sheet-like porous structure enhances surface active sites and increase the contact area between bacteria and electrodes.Therefore,the reactive oxygen species produced during the PEC process can directly act on the surface of bacteria and is100%effectively against drug-resistant Gram-positive and Gram-negative bacteria in water within 30 min.This study acts as a foundation for the development of novel photoelectrocatalyst electrodes for efficient water purification.
