Ionic thermoelectrics(i-TE) possesses great potential in powering distributed electronics because it can generate thermopower up to tens of millivolts per Kelvin. However,as ions cannot enter external circuit, the uti...Ionic thermoelectrics(i-TE) possesses great potential in powering distributed electronics because it can generate thermopower up to tens of millivolts per Kelvin. However,as ions cannot enter external circuit, the utilization of i-TE is currently based on capacitive charge/discharge, which results in discontinuous working mode and low energy density. Here,we introduce an ion–electron thermoelectric synergistic(IETS)effect by utilizing an ion–electron conductor. Electrons/holes can drift under the electric field generated by thermodiffusion of ions, thus converting the ionic current into electrical current that can pass through the external circuit. Due to the IETS effect, i-TE is able to operate continuously for over 3000 min.Moreover, our i-TE exhibits a thermopower of 32.7 mV K^(-1) and an energy density of 553.9 J m^(-2), which is more than 6.9 times of the highest reported value. Consequently, direct powering of electronics is achieved with i-TE. This work provides a novel strategy for the design of high-performance i-TE materials.展开更多
Two-dimensional layered transition metal dichalcogenides(TMDCs)have demonstrated a huge potential in the broad fields of optoelectronic devices,logic electronics,electronic integration,as well as neural networks.To ta...Two-dimensional layered transition metal dichalcogenides(TMDCs)have demonstrated a huge potential in the broad fields of optoelectronic devices,logic electronics,electronic integration,as well as neural networks.To take full advantage of TMDC characteristics and efficiently design the device structures,one of the most key processes is to control their p-/n-type modulation.In this review,we summarize the p-/n-type modulation of TMDCs based on diverse strategies consisting of intrinsic defect tailoring,substitutional doping,surface charge transfer,chemical intercalation,electrostatic modulation,and dielectric interface engineering.The modulation mechanisms and comparisons of these strategies are analyzed together with a discussion of their corresponding device applications in electronics and optoelectronics.Finally,challenges and outlooks for p-/n-type modulation of TMDCs are presented to provide references for future studies.展开更多
基金financially supported by research grants from the Natural Science Foundation of China [Grant No. 62074022 (K.S.), 12004057 (Y.J.Z.), 52173235 (M.L.)]the Natural Science Foundation of Chongqing [cstc2021jcyj-jqX0015 (K.S.)]+3 种基金Chongqing Talent Plan [cstc2021ycjh-bgzxm0334 (S.S.C.), CQYC2021059206 (K.S.)]Fundamental Research Funds for the Central Universities [No. 2020CDJQY-A055 (K.S.)]the Key Laboratory of Low-grade Energy Utilization Technologies and Systems [Grant No. LLEUTS-201901 (K.S.)]support from Chongqing Postgraduate Research and Innovation Project (CYS22032)。
文摘Ionic thermoelectrics(i-TE) possesses great potential in powering distributed electronics because it can generate thermopower up to tens of millivolts per Kelvin. However,as ions cannot enter external circuit, the utilization of i-TE is currently based on capacitive charge/discharge, which results in discontinuous working mode and low energy density. Here,we introduce an ion–electron thermoelectric synergistic(IETS)effect by utilizing an ion–electron conductor. Electrons/holes can drift under the electric field generated by thermodiffusion of ions, thus converting the ionic current into electrical current that can pass through the external circuit. Due to the IETS effect, i-TE is able to operate continuously for over 3000 min.Moreover, our i-TE exhibits a thermopower of 32.7 mV K^(-1) and an energy density of 553.9 J m^(-2), which is more than 6.9 times of the highest reported value. Consequently, direct powering of electronics is achieved with i-TE. This work provides a novel strategy for the design of high-performance i-TE materials.
基金supported by the National Science Foundation of China(Nos.61922005 and U1930105)the Beijing Municipal Natural Science Foundation(No.JQ20027)the Fundamental Research Funds for the Central Universities(No.048000546320504).
文摘Two-dimensional layered transition metal dichalcogenides(TMDCs)have demonstrated a huge potential in the broad fields of optoelectronic devices,logic electronics,electronic integration,as well as neural networks.To take full advantage of TMDC characteristics and efficiently design the device structures,one of the most key processes is to control their p-/n-type modulation.In this review,we summarize the p-/n-type modulation of TMDCs based on diverse strategies consisting of intrinsic defect tailoring,substitutional doping,surface charge transfer,chemical intercalation,electrostatic modulation,and dielectric interface engineering.The modulation mechanisms and comparisons of these strategies are analyzed together with a discussion of their corresponding device applications in electronics and optoelectronics.Finally,challenges and outlooks for p-/n-type modulation of TMDCs are presented to provide references for future studies.
