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Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness 被引量:1
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作者 Jie Xu nai-long he +3 位作者 Hai-Lian Liang Sen Zhang Yu-De Jiang Xiao-Feng Gu 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第6期516-520,共5页
A novel terminal-optimized triple RESURF LDMOS(TOTR-LDMOS) is proposed and verified in a 0.25-μm bipolarCMOS-DMOS(BCD) process. By introducing a low concentration region to the terminal region, the surface electric f... A novel terminal-optimized triple RESURF LDMOS(TOTR-LDMOS) is proposed and verified in a 0.25-μm bipolarCMOS-DMOS(BCD) process. By introducing a low concentration region to the terminal region, the surface electric field of the TOTR-LDMOS decreases, helping to improve the breakdown voltage(BV) and electrostatic discharge(ESD) robustness. Both traditional LDMOS and TOTR-LDMOS are fabricated and investigated by transmission line pulse(TLP) tests,direct current(DC) tests, and TCAD simulations. The results show that comparing with the traditional LDMOS, the BV of the TOTR-LDMOS increases from 755 V to 817 V without affecting the specific on-resistance(R_(on,sp)) of 6.99Ω·mm^(2).Meanwhile, the ESD robustness of the TOTR-LDMOS increases by 147%. The TOTR-LDMOS exhibits an excellent performance among the present 700-V LDMOS devices. 展开更多
关键词 lateral double-diffused MOSFET(LDMOS) terminal-optimization breakdown voltage electrostatic discharge
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