A 19 mW highly integrated GPS receiver with a ΣΔ fractional-N synthesizer is presented in this paper.Fractional-N frequency synthesizer architecture was adopted in this work, to provide more degrees of freedom in th...A 19 mW highly integrated GPS receiver with a ΣΔ fractional-N synthesizer is presented in this paper.Fractional-N frequency synthesizer architecture was adopted in this work, to provide more degrees of freedom in the synthesizer design.A high linearity low noise amplifier(LNA) is integrated into the chip.The radio receiver chip was fabricated in a 0.18 μm complementary metal oxide semiconductor(CMOS) process and packaged in a 48-pin 2 mm×2 mm land grid array chip scale package.The chip consumes 19 mW(LNA1 excluded) and the LNA1 6.3 mW.Measured performances are:noise figure<2 dB, channel gain=108 dB(LNA1 included), image rejection>36 dB, and-108 dBc/Hz @ 1 MHz phase noise offset from the carrier.The carrier noise ratio(C/N) can reach 41 dB at an input power of-130 dBm.The chip operates over a temperature range of-40, 120 °C and ±5% tolerance over the CMOS technology process.展开更多
基金Project supported by the National Natural Science Foundation of China (Nos. 60725415 and 60971066)the National High-Tech R & D Program (863) of China (Nos. 2009AA01Z258 and 2009AA 01Z260)
文摘A 19 mW highly integrated GPS receiver with a ΣΔ fractional-N synthesizer is presented in this paper.Fractional-N frequency synthesizer architecture was adopted in this work, to provide more degrees of freedom in the synthesizer design.A high linearity low noise amplifier(LNA) is integrated into the chip.The radio receiver chip was fabricated in a 0.18 μm complementary metal oxide semiconductor(CMOS) process and packaged in a 48-pin 2 mm×2 mm land grid array chip scale package.The chip consumes 19 mW(LNA1 excluded) and the LNA1 6.3 mW.Measured performances are:noise figure<2 dB, channel gain=108 dB(LNA1 included), image rejection>36 dB, and-108 dBc/Hz @ 1 MHz phase noise offset from the carrier.The carrier noise ratio(C/N) can reach 41 dB at an input power of-130 dBm.The chip operates over a temperature range of-40, 120 °C and ±5% tolerance over the CMOS technology process.
