期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Environmental engineering of transition metal dichalcogenide optoelectronics 被引量:4
1
作者 Trevor LaMountain Erik J. Lenferink +2 位作者 Yen-Jung Chen Teodor K. Stanev nathaniel p. stern 《Frontiers of physics》 SCIE CSCD 2018年第4期21-52,共32页
The explosion of interest in two-dimensional van der Waals materials has been in many ways driven by their layered geometry. This feature makes possible numerous avenues for assembling and ma- nipulating the optical a... The explosion of interest in two-dimensional van der Waals materials has been in many ways driven by their layered geometry. This feature makes possible numerous avenues for assembling and ma- nipulating the optical and electronic properties of these materials. In the specific case of monolayer transition metal dichalcogenide semiconductors, the direct band gap combined with the flexibility for manipulation of layers has made this class of materials promising for optoelectronics. Here, we review the properties of these layered materials and the various means of engineering these properties for optoeleetronics. We summarize approaches for control that modify their structural and chemical en- vironment, and we give particular detail on the integration of these materials into engineered optical fields to control their optical characteristics. This combination of controllability from their layered surface structure and photonic environment provide an expansive landscape for novel optoelectronic phenomena. 展开更多
关键词 transition metal dichalcogenides OPTOELECTRONICS van der Waals materials HETEROSTRUCTURES EXCITONS
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部